High electron mobility transistor and method for fabricating the same

Abstract

A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

What is claimed is: 
     
         1 . A high electron mobility transistor (HEMT), comprising:
 a buffer layer on a substrate;   a first barrier layer on the buffer layer;   a p-type semiconductor layer on the first barrier layer;   a hard mask on the p-type semiconductor layer; and   a spacer adjacent to the p-type semiconductor layer.   
     
     
         2 . The HEMT of  claim 1 , further comprising:
 a gate electrode on the p-type semiconductor layer; and   a source electrode and a drain electrode adjacent to two sides of the spacer.   
     
     
         3 . The HEMT of  claim 2 , wherein the hard mask is between the p-type semiconductor layer and the gate electrode. 
     
     
         4 . The HEMT of  claim 1 , wherein the hard mask comprises a conductive material. 
     
     
         5 . The HEMT of  claim 1 , further comprising a second barrier layer adjacent to the spacer on the first barrier layer.