Cluster processing system for forming a metal containing material

Abstract

Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.

What is claimed is: 
     
         1 . A method for a device structure for semiconductor devices, comprising:
 performing a first deposition process on a substrate to form a two-dimensional transition metal dichalcogenide layer in a cluster processing system without breaking vacuum;   performing a thermal treatment process on the two-dimensional transition metal dichalcogenide layer in the cluster processing system without breaking vacuum, wherein the thermal treatment removes carbon from the film leaving only sulfur from the process gas and metal from a metal precursor to form a MX 2  compound, wherein M comprises molybdenum (Mo) or tungsten (W) and X comprises sulfur (S); and   performing a second deposition process to form a capping layer on the two-dimensional transition metal dichalcogenide layer in the cluster processing system without breaking vacuum.   
     
     
         2 . The method of  claim 1 , wherein the two-dimensional transition metal dichalcogenide layer is at least one of MoS 2 , WS 2 , MoSe 2  and WSe 2 . 
     
     
         3 . The method of  claim 1 , wherein the first deposition process is an atomic layer deposition process or a chemical vapor deposition process. 
     
     
         4 . The method of  claim 1 , wherein the second deposition process is an atomic layer deposition process or a chemical vapor deposition process. 
     
     
         5 . The method of  claim 1 , wherein the first deposition process is performed by supplying a gas mixture including Mo(CO) 6  and H 2 S or diethylsulfide to form the two-dimensional transition metal dichalcogenide layer. 
     
     
         6 . The method of  claim 1 , wherein the capping layer is at least one of SiN, SiO 2 , SiON, SiC, SiOC, HfO 2 , ZrO 2  and Al 2 O 3 . 
     
     
         7 . The method of  claim 1 , wherein the thermal treatment process comprises:
 maintaining a substrate temperature between about 600 degrees Celsius and about 1500 degree Celsius.   
     
     
         8 . The method of  claim 1 , wherein the first deposition process comprises:
 supplying a deposition gas mixture including a metal containing precursor and a reacting gas, wherein the metal containing precursor is selected from a group consisting of Mo(NMe 2 ) 4 , MoCl 5 , MoF 6 , tetramethylheptane-3,5-dionato (Mo(thd) 3 ), Mo(CO) 6 , WF 6  and W 2 (NMe 2 ) 6 .   
     
     
         9 . The method of  claim 8 , wherein the deposition gas mixture includes Mo(CO) 6  and H 2 S or diethylsulfide. 
     
     
         10 . The method of  claim 1 , wherein the thermal treatment process comprises:
 converting the two-dimensional transition metal dichalcogenide to a crystalline state.   
     
     
         11 . The method of  claim 1 , further comprising:
 pre-cleaning the substrate in a pre-cleaning chamber incorporated in the cluster processing system prior to forming the organic film.   
     
     
         12 . The method of  claim 11 , wherein the substrate is pre-cleaned by a remote plasma source generated from a hydrogen containing gas mixture in the pre-cleaning chamber. 
     
     
         13 . A cluster processing system, comprising:
 a transfer chamber;   a first deposition chamber coupled to the transfer chamber and configured to form an organic film, wherein the first deposition chamber is an atomic layer deposition chamber;   an annealing chamber coupled to the transfer chamber;   a second deposition chamber coupled to the transfer chamber; and   a pre-cleaning chamber coupled to the transfer chamber.   
     
     
         14 . The cluster processing system of  claim 13 , further comprising:
 a controller of the cluster processing system causing the cluster processing system to:   forming a organic film from a two-dimensional transition metal dichalcogenide and a carbon containing process gas, wherein the organic film is formed on a substrate in a first processing chamber disposed in a cluster processing system;   thermally treating the organic film to form a treated metal layer in a second processing chamber disposed in the cluster processing system, wherein the thermal treatment converts the organic film into an inorganic film; and   form a capping layer on the treated metal layer in the second deposition chamber disposed in the cluster processing system.   
     
     
         15 . The cluster processing system of  claim 13 , wherein the two-dimensional transition metal dichalcogenide is at least one of MoS 2 , WS 2 , MoSe 2  and WSe 2 . 
     
     
         16 . The cluster processing system of  claim 14 , wherein the second deposition chamber is a chemical vapor deposition chamber configured to deposit the capping layer, and wherein the chemical vapor deposition chamber is configured to deposit at least one of SiN, SiO 2 , SiON, SiC, SiOC, HfO 2 , ZrO 2  and Al 2 O 3 . 
     
     
         17 . The cluster processing system of  claim 14 , wherein the annealing chamber is configured to thermally treat the organic film at a substrate temperature of between about 600 degrees Celsius and about 1500 degree Celsius. 
     
     
         18 . The cluster processing system of  claim 14 , wherein the first processing chamber is coupled to a supply of a metal containing precursor and a reacting gas, wherein the metal containing precursor is selected from a group consisting of Mo(NMe 2 ) 4 , MoCl 5 , MoF 6 , tetramethylheptane-3,5-dionato (Mo(thd) 3 ), Mo(CO) 6 , WF 6  and W 2 (NMe 2 ) 6 , wherein reacting gas is selected from a group consisting of 1,2-ethanedithiol, dimethyldisulfide, diethyldisulfide and diethylsulfide, and wherein the deposition gas mixture includes Mo(CO) 6  and H 2 S or diethylsulfide. 
     
     
         19 . The cluster processing system of  claim 14 , wherein the annealing chamber is configured to convert the two-dimensional transition metal dichalcogenide to a crystalline state. 
     
     
         20 . The cluster processing system of  claim 14 , wherein the pre-cleaning chamber comprises a remote plasma source coupled to a hydrogen containing gas mixture.