US2023371311A1PendingUtilityA1

Display apparatus and method of manufacturing the same

Assignee: SAMSUNG DISPLAY CO LTDPriority: Oct 31, 2018Filed: Jul 20, 2023Published: Nov 16, 2023
Est. expiryOct 31, 2038(~12.2 yrs left)· nominal 20-yr term from priority
H10D 62/83H10K 71/40H10K 59/1213H10D 30/6713H10D 62/405H10D 62/402H10D 30/6745H10D 30/6731H10D 30/0321H10D 30/0314H10D 62/60H01L 29/1604H01L 29/045H01L 29/78675H10K 50/12H10K 50/165H10K 59/123H10K 71/00H10K 50/11H10K 59/1201Y02E10/549Y02P70/50H10K 71/30H10K 77/111H10K 71/20
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Claims

Abstract

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A display apparatus, comprising:
 a substrate;   a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region; and   a display device on the substrate and electrically connected to the first thin film transistor, wherein   the source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant, and   a concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

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