Imaging element, stacked-type imaging element, and solid-state imaging apparatus

Abstract

An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.

What is claimed is: 
     
         1 - 13 . (canceled) 
     
     
         14 . Alight detecting element, comprising a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being disposed between the first electrode and the second electrode,
 wherein an inorganic oxide semiconductor material layer is disposed between the first electrode and the photoelectric conversion layer, and   wherein the inorganic oxide semiconductor material layer includes indium atoms, gallium atoms, tin atoms, and zinc atoms, and when the inorganic oxide semiconductor material layer is represented by In a Ga b Sn c Zn d O e ,
   1.8<( b+c )/ a< 2.3 
   and 
   2.3< d/a< 2.6 
   
       are satisfied. 
     
     
         15 . The light detecting element according to  claim 14 , wherein the photoelectric conversion section further includes an insulating layer, and a charge storage electrode that is disposed spaced from the first electrode and that is disposed to face the inorganic oxide semiconductor material layer, with the insulating layer interposed therebetween. 
     
     
         16 . The light detecting element according to  claim 14 , wherein a LUMO value E1 of a material constituting a part of the photoelectric conversion layer located in a vicinity of the inorganic oxide semiconductor material layer and a LUMO value E2 of a material constituting the inorganic oxide semiconductor material layer satisfy the following expression:
     E 2− E 1≥0.1 eV.
   
     
     
         17 . The light detecting element according to  claim 16 , wherein the following expression is satisfied:
     E 2− E 1>0.1 eV.
   
     
     
         18 . The light detecting element according to  claim 14 , wherein mobility of a material constituting the inorganic oxide semiconductor material layer is equal to or more than 10 cm 2 /V·s. 
     
     
         19 . The light detecting element according to  claim 14 , wherein the inorganic oxide semiconductor material layer is amorphous. 
     
     
         20 . The light detecting element according to  claim 14 , wherein a thickness of the inorganic oxide semiconductor material layer is 1×10 −8  to 1.5×10 −7  m. 
     
     
         21 . The light detecting element according to  claim 14 ,
 wherein light is incident from the second electrode, and   a surface roughness Ra of the inorganic oxide semiconductor material layer at an interface between the photoelectric conversion layer and the inorganic oxide semiconductor material layer is equal to or less than 1.5 nm, and a value of root mean square roughness Rq of the inorganic oxide semiconductor material layer is equal to or less than 2.5 nm.   
     
     
         22 . A stacked-type light detecting element, comprising:
 at least one light detecting element according to  claim 14 .   
     
     
         23 . A light detecting apparatus, comprising:
 a plurality of light detecting elements according to  claim 14 .   
     
     
         24 . A light detecting apparatus, comprising:
 a plurality of stacked-type light detecting elements according to  claim 22 .