Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus

Abstract

There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

1 . A light detecting device, comprising:
 a first electrode;   a second electrode;   a photoelectric conversion layer disposed between the first electrode and the second electrode; and   a first organic semiconductor material comprising an indolocarbazole derivative and disposed between the first electrode and the second electrode,   wherein the indolocarbazole derivative is represented by a following formula (8)   
       
         
           
           
               
               
           
         
         and, wherein, in the formula (8), the Ar16 to Ar18 each independently represent an aryl group; and R73 to R84 each independently represent a hydrogen group, an alkyl group, an aryl group, an arylamino group, an aryl group having an arylamino group as a substituent, or a carbazolyl group. 
       
     
     
         2 . The light detecting device according to  claim 1 , wherein a first layer disposed between the photoelectric conversion layer and the first electrode comprises the first organic semiconductor material. 
     
     
         3 . The light detecting device according to  claim 1 , wherein the formula (8) is selected from a group consisting of formulas (145) to (150). 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         4 . The light detecting device according to  claim 1 , wherein a highest occupied molecular orbital level or work function of a p-type semiconductor comprised in the photoelectric conversion layer is −5.6 eV to −5.7 eV. 
     
     
         5 . The light detecting device according to  claim 1 , wherein a difference between a highest occupied molecular orbital level of the first organic semiconductor material and a highest occupied molecular orbital level or work function of a p-type semiconductor contained in the photoelectric conversion layer is in the range of ±0.2 eV. 
     
     
         6 . The light detecting device according to  claim 4 , wherein a difference between a highest occupied molecular orbital level of the first organic semiconductor material and the highest occupied molecular orbital level or the work function of the p-type semiconductor is in the range of ±0.2 eV. 
     
     
         7 . The light detecting device according to  claim 2 , wherein the first layer is an electron blocking layer. 
     
     
         8 . The light detecting device according to  claim 2 , wherein the second electrode comprises indium-zinc oxide. 
     
     
         9 . The light detecting device according to  claim 2 , wherein the first electrode comprises indium-tin oxide. 
     
     
         10 . The light detecting device according to  claim 2 , wherein the photoelectric conversion layer comprises at least two materials selected from the group consisting of a naphthalene derivative, an anthracene derivative, a phenanthrene derivative, a pyrene derivative, a perylene derivative, a tetracene derivative, a pentacene derivative, a quinacridone derivative, a picene derivative, a chrysene derivative, a fluoranthene derivative, a phthalocyanine derivative, a subphthalocyanine derivative, a metal complex having a heterocyclic compound as a ligand, a thienoacene material typified by a benzothienothiophene (BTBT) derivative, a dinaphthothienothiophene (DNTT) derivative, a dianthracenothienothiophene (DATT) derivative, a benzobisbenzothiophene (BBBT) derivative, a thienobisbenzothiophene (TBBT) derivative, a dibenzothienobisbenzothiophene (DBTBT) derivative, a dithienobenzodithiophene (DTBDT) derivative, a dibenzothienodithiophene (DBTDT) derivative, a benzodithiophene (BDT) derivative, a naphthodithiophene (NDT) derivative, an anthracenodithiophene (ADT) derivative, a tetracenodithiophene (TDT) derivative, a pentacenodithiophene (PDT) derivative, and a compound represented by the following formula (11) 
       
         
           
           
               
               
           
         
         wherein, R 109  to R 112  each independently represent a hydrogen group, an alkyl group, an aryl group, an arylamino group, or a carbazolyl group, organic semiconductors having HOMO levels and LUMO levels higher than those of p-type organic semiconductors, transparent inorganic metal oxides, a heterocyclic compound containing a nitrogen atom and an oxygen atom and a sulfur atom, organic molecules, organometallic complexes and subphthalocyanine derivatives having pyridine, pyrazine, pyrimidine, triazine, quinoline, quinoxaline, isoquinoline, acridine, phenazine, phenanthroline, tetrazole, pyrazole, imidazole, thiazole, oxazole, benzimidazole, benzotriazole, benzoxazole, carbazole, benzofuran, dibenzofuran, fullerenes, and fullerene derivatives. 
       
     
     
         11 . The light detecting device according to  claim 1 , further comprising a second layer comprising a second organic semiconductor material, the second layer being disposed between the photoelectric conversion layer and the second electrode, wherein the second organic semiconductor material comprises at least one of pyridine, quinoline, acridine, indole, imidazole, benzimidazole, phenanthroline, and fullerenes and derivatives thereof having absorption in the visible light region from 400 nm to 700 nm and typified by C60 and C70. 
     
     
         12 . The light detecting device according to  claim 2 , further comprising a third layer comprising a first semiconductor material, the third layer being disposed adjacent to the first layer. 
     
     
         13 . The light detecting device according to  claim 12 ,
 wherein the first semiconductor material comprises at least one material selected from the group consisting of triarylamine compounds, benzidine compounds, styrylamine compounds, carbazole derivatives, naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, picene derivatives, chrysene derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, hexaazatriphenylene derivatives, metal complexes having a heterocyclic compound as a ligand, thienoacene materials typified by benzothienothiophene (BTBT) derivatives, dinaphthothienothiophene (DNTT) derivatives, dianthracenothienothiophene (DATT) derivatives, benzobisbenzothiophene (BBBT) derivatives, thienobisbenzothiophene (TBBT) derivatives, dibenzothienobisbenzothiophene (DBTBT) derivatives, dithienobenzodithiophene (DTBDT) derivatives, dibenzothienodithiophene (DBTDT) derivatives, benzodithiophene (BDT) derivatives, naphthodithiophene (NDT) derivatives, anthracenodithiophene (ADT) derivatives, tetracenodithiophene (TDT) derivatives and pentacenodithiophene (PDT) derivatives, poly(3,4-ethylenedioxythiophene)/polystyrenesulfonic acid (PEDOT/PSS), polyaniline, molybdenum oxide (MoOx), ruthenium oxide (RuOx), vanadium oxide (VOx), tungsten oxide (WOx).   
     
     
         14 . The light detecting device according to  claim 1 , further comprising:
 a second organic semiconductor material disposed between the photoelectric conversion layer and the second electrode,   wherein the second electrode comprises indium-zinc oxide, wherein the first electrode comprises indium-tin oxide, wherein the photoelectric conversion layer comprises 2 Ph-benzothienothiophene, subphthalocyanine, and C60, and wherein the second organic semiconductor material comprises at least one of pyridine, quinoline, acridine, indole, imidazole, benzimidazole, phenanthroline, and fullerenes and derivatives thereof having absorption in the visible light region from 400 nm to 700 nm and typified by C60 and C70.   
     
     
         15 . An electronic apparatus, comprising:
 a lens;   signal processing circuitry; and   a light detecting device, comprising:   a first electrode;   a second electrode;   a photoelectric conversion layer disposed between the first electrode and the second electrode; and   a first organic semiconductor material comprising an indolocarbazole derivative and disposed between the first electrode and the second electrode.   
     
     
         16 . The electronic apparatus according to  claim 15 , wherein a first layer disposed between the photoelectric conversion layer and the first electrode comprises the first organic semiconductor material. 
     
     
         17 . The electronic apparatus according to  claim 16 , wherein the first layer is an electron blocking layer. 
     
     
         18 . The electronic apparatus according to  claim 16 , wherein the second electrode comprises indium-zinc oxide. 
     
     
         19 . The electronic apparatus according to  claim 16 , wherein the first electrode comprises indium-tin oxide. 
     
     
         20 . The electronic apparatus according to  claim 15 , wherein a highest occupied molecular orbital level or work function of a p-type semiconductor comprised in the photoelectric conversion layer is −5.6 eV to −5.7 eV.