Semiconductor device and method of manufacturing a semiconductor device

Abstract

A semiconductor device comprises a substrate having a substrate top side, a substrate lateral side, and a substrate bottom side, an electronic device on the substrate top side, and an encapsulant on the substrate top side and contacting a lateral surface of the electronic device. The substrate comprises a conductive structure and a dielectric structure that extends comprising a protrusion in contact with the encapsulant. The conductive structure comprises a lead comprising a lead flank, the lead flank comprising a cavity and a conductive coating on a surface of the lead in the cavity. The conductive structure comprises a pad exposed at the substrate top side, embedded in the dielectric structure, and adjacent to the protrusion, to electrically couple with the electronic device via a first internal interconnect. Other examples and related methods are also disclosed herein.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a substrate having a substrate top side, a substrate lateral side, and a substrate bottom side;   an electronic device on the substrate top side; and   an encapsulant on the substrate top side and contacting a lateral surface of the electronic device;   wherein the substrate comprises a conductive structure and a dielectric structure comprising a protrusion in contact with the encapsulant;   wherein the conductive structure comprises a lead comprising a lead flank, the lead flank comprising a cavity and a conductive coating on a surface of the lead flank in the cavity; and   wherein the conductive structure comprises a pad exposed at the substrate top side, embedded in the dielectric structure, and adjacent to the protrusion, to electrically couple with the electronic device via a first internal interconnect.