Method of fabricating semiconductor structure

Abstract

A method includes the following steps. A semiconductor wafer including integrated circuit components, seal rings respectively encircling the integrated circuit components and testing structures disposed between the seal rings is provided. A first wafer saw process is performed at least along a first path to singulate the semiconductor wafer into a plurality of first singulated integrated circuit components each including a testing structure among the testing structures. When performing the first wafer saw process, testing pads of the testing structures are located beside the first path, such that a testing pad of a corresponding one of the testing structures in the first singulated integrated circuit component is laterally spaced apart from a sidewall of the first singulated integrated circuit component by a distance.

What is claimed is: 
     
         1 . A method, comprising:
 providing a semiconductor wafer comprising integrated circuit components, seal rings respectively encircling the integrated circuit components and testing structures disposed between the seal rings;   performing a first cutting process at least along a first path to singulate the semiconductor wafer into a plurality of singulated integrated circuit components each comprising a testing structure among the testing structures, wherein the testing structures are not cut by a blade used in the first cutting process, such that one testing structure among the testing structures distributed in the singulated integrated circuit component is laterally spaced apart from a sidewall of the singulated integrated circuit component; and performing a second cutting process along a second path between the testing structures and the seal rings to cut the testing structures from the singulated integrated circuit components.   
     
     
         2 . The method as claimed in  claim 1 , wherein providing the semiconductor wafer comprises:
 forming stacked structures of the testing structures over a semiconductor substrate; and   forming the testing pads on the stacked structures.   
     
     
         3 . The method as claimed in  claim 2 , wherein providing the semiconductor wafer further comprises:
 forming interconnect wirings of the integrated circuit components over the semiconductor substrate; and   forming conductive pads on the interconnect wirings, wherein the interconnect wirings and the stacked structures of the testing structures are concurrently formed at a first level height, and the conductive pads and the testing pads of the testing structures are concurrently formed at a second level height.   
     
     
         4 . The method as claimed in  claim 2 , wherein materials of the testing pads and the stacked structures are different. 
     
     
         5 . The method as claimed in  claim 2 , wherein the stacked structures of the testing structures are located beside the first path and keep a distance from the first path, such that a stacked structure of the testing structure in the singulated integrated circuit component is laterally spaced apart from the sidewall of the singulated integrated circuit component. 
     
     
         6 . The method as claimed in  claim 2 , wherein the stacked structures of the testing structures are not revealed at the sidewall of the singulated integrated circuit component. 
     
     
         7 . The method as claimed in  claim 1 , wherein the first path is laterally spaced apart from the second path. 
     
     
         8 . The method as claimed in  claim 1 , further comprising:
 performing a testing process to qualify the integrated circuit components by testing the testing structures; and   according to the testing process, bonding a qualified singulated integrated circuit component among the singulated integrated circuit components to a semiconductor device.   
     
     
         9 . The method as claimed in  claim 1 , wherein the second cutting process is performed using a blade. 
     
     
         10 . A method, comprising:
 providing a semiconductor wafer comprising integrated circuit components, seal rings respectively encircling the integrated circuit components and testing structures disposed between the seal rings;   performing a first cutting process at least to singulate the semiconductor wafer into a plurality of singulated integrated circuit components; and   performing a second cutting process along a path between the testing structures and the seal rings to remove the testing structures from the singulated integrated circuit components, wherein the second cutting process is performed using a blade, and the testing structures are not in contact with the blade used in the second cutting process.   
     
     
         11 . The method as claimed in  claim 10 , wherein the testing structures are not in contact with a blade used in the first cutting process. 
     
     
         12 . The method as claimed in  claim 10 , wherein providing the semiconductor wafer further comprises:
 concurrently forming interconnect wirings of the integrated circuit components and stacked structures of the testing structures over a semiconductor substrate at a first level height; and   forming conductive pads on the interconnect wirings at a second level height.   
     
     
         13 . The method as claimed in  claim 10 , further comprising:
 performing a testing process to qualify the singulated integrated circuit components by testing the testing structures; and   according to the testing process, bonding a qualified singulated integrated circuit component among the singulated integrated circuit components to a semiconductor device.   
     
     
         14 . A method, comprising:
 providing a semiconductor wafer comprising integrated circuit components and testing structures; and   performing a cutting process to singulate the semiconductor wafer into a plurality of first pieces and a plurality of second pieces, wherein each of the first pieces respectively comprises one integrated circuit component among the integrated circuit components, and each of the second pieces respectively comprises at least one testing structure among the testing structures, wherein the testing structures are arranged along a path which is offset from a cutting path of the cutting process.   
     
     
         15 . The method as claimed in  claim 14 , wherein performing the cutting process comprises:
 performing a first cutting process at least along a first path to singulate the semiconductor wafer into a plurality of singulated structures, wherein each of the singulated structures respectively comprises one integrated circuit component among the integrated circuit components and at least one testing structure among the testing structures; and   after performing the first cutting process, performing a second cutting process along a second path to cut the testing structures from the singulated structures to obtain the first pieces and the second pieces.   
     
     
         16 . The method as claimed in  claim 15 , wherein during the first cutting process, the testing structures are not in contact with a blade used in the first cutting process. 
     
     
         17 . The method as claimed in  claim 15 , wherein during the second cutting process, the testing structures are not in contact with a blade used in the second cutting process. 
     
     
         18 . The method as claimed in  claim 14 , wherein the testing structures in the singulated structures are not revealed at sidewalls of the singulated structures after performing the first cutting process. 
     
     
         19 . The method as claimed in  claim 14 , wherein the testing structures in the pieces are not revealed at sidewalls of the pieces after performing the second cutting process. 
     
     
         20 . The method as claimed in  claim 14 , wherein the first cutting process and the second cutting process are performed using a blade.