Substrate processing method and substrate processing apparatus

Abstract

A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit ( 31 ) which is rotatable, a step of arranging a top plate portion ( 41 ) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion ( 41 ) to wash the substrate and the top plate portion ( 41 ) with the rinsing liquid (Lr).

1 . A substrate processing method comprising:
 holding a substrate by a substrate holding unit that is rotatable;   arranging a top plate portion above the substrate;   supplying a processing liquid to the substrate; and   supplying a rinsing liquid between the substrate and the top plate portion to wash the substrate and the top plate portion with the rinsing liquid,   
       wherein
 washing with the rinsing liquid includes filling between the substrate and the top plate portion with the rinsing liquid. 
 
     
     
         2 . A substrate processing method comprising:
 holding a substrate by a substrate holding unit that is rotatable;   arranging a top plate portion above the substrate;   supplying a processing liquid to the substrate; and   supplying a rinsing liquid between the substrate and the top plate portion to wash the substrate and the top plate portion with the rinsing liquid,   
       wherein
 washing with the rinsing liquid includes supplying the rinsing liquid between the substrate and the top plate portion while rotating the substrate, 
 the method further comprising, after washing with the rinsing liquid; 
 increasing the number of rotations of the substrate to reduce a film thickness of the rinsing liquid and 
 raising the top plate portion after reducing the film thickness of the rinsing liquid. 
 
     
     
         3 . The substrate processing method according to  claim 1 , wherein
 the rinsing liquid undergoes static elimination before being supplied in washing with the rinsing liquid.   
     
     
         4 . The substrate processing method according to  claim 1 , further comprising
 replacing the rinsing liquid on the substrate with a drying liquid, the replacing being performed after washing with the rinsing liquid.   
     
     
         5 . The substrate processing method according to  claim 1 , further comprising
 supplying an atmosphere adjusting gas between the substrate and the top plate portion.   
     
     
         6 . The substrate processing method according to  claim 5 , wherein
 supplying the atmosphere adjusting gas is performed to increase a supply amount of the atmosphere adjusting gas together with an increase of the number of rotations of the substrate.   
     
     
         7 . A substrate processing apparatus comprising:
 a substrate holding unit that holds and rotates a substrate;   a liquid supply section that supplies a processing liquid and a rinsing liquid to the substrate;   a top plate portion provided to face the substrate held by the substrate holding unit; and   a controller that controls the substrate holding unit, the liquid supply section, and the top plate portion,   
       wherein,
 after the processing liquid has been supplied to the substrate, the controller controls to supply a rinsing liquid between the substrate held by the substrate holding unit and the top plate portion to wash the substrate and the top plate portion with the rinsing liquid by filling between the substrate and the top plate portion with the rinsing liquid. 
 
     
     
         8 . The substrate processing apparatus according to  claim 7 , wherein
 the top plate portion includes a static elimination mechanism.   
     
     
         9 . The substrate processing apparatus according to  claim 7 , further comprising
 a gas supply unit that supplies an atmosphere adjusting gas between the substrate and the top plate portion,   wherein the controller controls to increase a supply amount of the atmosphere adjusting gas together with an increase of the number of rotations of the substrate.