US2023352248A1PendingUtilityA1

Method for manufacturing electronic component

Assignee: SHOEI CHEMICAL IND COPriority: May 1, 2020Filed: Jul 3, 2023Published: Nov 2, 2023
Est. expiryMay 1, 2040(~13.8 yrs left)· nominal 20-yr term from priority
Inventors:Soichiro Esaki
H01G 4/2325H01G 9/0029H01G 13/00H01G 4/30H01G 4/232H01G 9/15H01G 9/012H01G 9/0425H01G 13/006H01G 9/008H01G 4/12H01G 9/055
60
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Claims

Abstract

A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.

Claims

exact text as granted — not AI-modified
1 . A method for manufacturing an electronic component, comprising:
 a preparation step of preparing an electrode-forming body for electronic components; and   an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein:   in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by applying the conductive resin composition containing a silicone resin to the electrode-forming body for electronic components and then curing the conductive resin composition;   the silicone resin is a thermosetting silicone resin; and   when the conductive resin composition is cast on a slide glass substrate to a thickness of 50 μm, cured by placing an aluminum cylinder having a diameter of 3 mm thereon under the conditions of 200° C. for 60 minutes, and pulled in the vertical direction at a rate of 0.5 mm/s using a bond tester, a value at break is 2.1 MPa or more.   
     
     
         2 . The method for manufacturing an electronic component according to  claim 1 , wherein a moisture permeation amount is 80.0 mg or less as determined by casting the conductive resin composition on a PET film to a thickness of 250 μm, curing the conductive resin composition under the conditions of 200° C. for 60 minutes, cutting a cured film obtained into a circle of 7.5 mm in diameter, fixing the cured film with an adhesive so as to cover a 5 ml glass bottle containing 2 g of silica gel, placing the glass bottle in a 750 ml vessel containing 100 ml of purified water so that the cured film does not come into contact with the purified water, sealing and placing the 750 ml vessel in a dryer at 65° C. to be left for 15 hours, measuring weight of the glass bottle before and after the glass bottle is placed in the dryer, and defining a weight increase thereof as the moisture permeation amount. 
     
     
         3 . The method for manufacturing an electronic component according to  claim 1 , wherein: when 1% strain is applied to the conductive resin composition at an angular frequency of 1 Hz, a value of a phase difference δ between the strain and a stress caused by the strain is in a range of 32 to 88°; and/or a ratio of a viscosity of the conductive resin composition at a shear rate of 0.4 (1/s) to a viscosity thereof at a shear rate of 40 (1/s) is in a range of 1.4 to 60.0. 
     
     
         4 . The method for manufacturing an electronic component according to  claim 2 , wherein: when 1% strain is applied to the conductive resin composition at an angular frequency of 1 Hz, a value of a phase difference δ between the strain and a stress caused by the strain is in a range of 32 to 88°; and/or a ratio of a viscosity of the conductive resin composition at a shear rate of 0.4 (1/s) to a viscosity thereof at a shear rate of 40 (1/s) is in a range of 1.4 to 60.0. 
     
     
         5 . The method for manufacturing an electronic component according to  claim 1 , wherein the silicone resin is a silicone resin that has a hydroxy group and is cured through a dehydration reaction upon heating. 
     
     
         6 . The method for manufacturing an electronic component according to  claim 2 , wherein the silicone resin is a silicone resin that has a hydroxy group and is cured through a dehydration reaction upon heating. 
     
     
         7 . The method for manufacturing an electronic component according to  claim 3 , wherein the silicone resin is a silicone resin that has a hydroxy group and is cured through a dehydration reaction upon heating. 
     
     
         8 . The method for manufacturing an electronic component according to  claim 4 , wherein the silicone resin is a silicone resin that has a hydroxy group and is cured through a dehydration reaction upon heating. 
     
     
         9 . The method for manufacturing an electronic component according to  claim 1 , wherein the silicone resin has an epoxy group. 
     
     
         10 . The method for manufacturing an electronic component according to  claim 1 , wherein:
 the electrode-forming body for electronic components is a laminated body for a multilayer electronic component formed of a ceramic layer and an internal electrode layer; and   when 1% strain is applied to the conductive resin composition at an angular frequency of 1 Hz, a value of a phase difference δ between the strain and a stress caused by the strain is in a range of 45 to 87°; and/or a ratio of a viscosity of the conductive resin composition at a shear rate of 0.4 (1/s) to a viscosity thereof at a shear rate of 40 (1/s) is in a range of 1.5 to 20.0.   
     
     
         11 . The method for manufacturing an electronic component according to  claim 10 , wherein in the electrode forming step, the conductive resin composition containing the silicone resin is applied to the electrode-forming body for electronic components by a dip method. 
     
     
         12 . The method for manufacturing an electronic component according to  claim 1 , wherein:
 the electrode-forming body for electronic components is a cathode-forming body for a solid electrolytic capacitor composed of an anode and a dielectric layer formed on a surface of the anode; and   when 1% strain is applied to the conductive resin composition at an angular frequency of 1 Hz, a value of a phase difference δ between the strain and a stress caused by the strain is in a range of 32 to 87°; and/or a ratio of a viscosity of the conductive resin composition at a shear rate of 0.4 (1/s) to a viscosity thereof at a shear rate of 40 (1/s) is in a range of 1.5 to 60.0.   
     
     
         13 . The method for manufacturing an electronic component according to  claim 12 , wherein in the electrode forming step, the conductive resin composition containing the silicone resin is applied to the electrode-forming body for electronic components by a dip method. 
     
     
         14 . The method for manufacturing an electronic component according to  claim 1 , wherein the conductive resin composition containing the silicone resin contains a metal powder, the metal powder contains a flaky metal powder, and a content ratio of the flaky metal powder to the entire metal powder is 20.0% by mass or more. 
     
     
         15 . The method for manufacturing an electronic component according to  claim 14 , wherein the metal powder contains at least one or more powders selected from: one or more powders of silver, copper, nickel, palladium, platinum, gold, and aluminum; a powder containing an alloy of one or more of these metals; a silver-coated copper powder; and a silver-coated nickel powder. 
     
     
         16 . The method for manufacturing an electronic component according to  claim 14 , wherein the flaky metal powder has an aspect ratio of 1.5 to 50.0; the flaky metal powder has a number average particle diameter of 0.1 to 20.0 μm as measured using a scanning electron microscope (SEM); and the flaky metal powder has a specific surface area of 0.5 to 5.0 m 2 /g. 
     
     
         17 . The method for manufacturing an electronic component according to  claim 14 , wherein the metal powder contains a spherical metal powder, a content ratio of the spherical metal powder to the entire metal powder is 80.0% by mass or less, and a content of the flaky metal powder with respect to the entire metal powder is 20.0% by mass or more. 
     
     
         18 . The method for manufacturing an electronic component according to  claim 17 , wherein the spherical metal powder has a volume-based cumulative 50% particle diameter (D 50 ) of 0.01 to 7.0 μm, and the spherical metal powder has a specific surface area of 0.2 to 3.0 m 2 /g. 
     
     
         19 . The method for manufacturing an electronic component according to  claim 14 , wherein a content of a resin component in the conductive resin composition containing the silicone resin is 2.5 to 35.0 parts by mass with respect to 100.0 parts by mass of the metal powder. 
     
     
         20 . The method for manufacturing an electronic component according to  claim 1 , wherein a content ratio of the silicone resin to the total resin component ((silicone resin/total resin)×100) is 70.0% by mass or more in the conductive resin composition containing the silicone resin.

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