US2023352102A1PendingUtilityA1
High voltage switch circuit and semiconductor memory device having the same
Est. expiryNov 30, 2040(~14.3 yrs left)· nominal 20-yr term from priority
G11C 16/30G11C 16/08G11C 16/12G11C 16/0483G11C 8/12G11C 8/08G11C 8/14G11C 5/145
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Claims
Abstract
A high voltage switch circuit and a semiconductor memory device having the same are provided. The high voltage switch circuit includes a switching circuit for outputting a high voltage by transmitting one of a plurality of pump voltages to an output node; and a discharge circuit connected between the output node and a terminal of an internal power voltage, the discharge circuit discharging the high voltage to a level of the internal power voltage. The discharge circuit includes a triple well transistor.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A high voltage switch circuit comprising:
a switching circuit configured to output a high voltage by transmitting one of a plurality of pump voltages to an output node; and a discharge circuit connected between the output node and a terminal of an internal power voltage, and configured to discharge the high voltage to a level of the internal power voltage, wherein the discharge circuit includes a triple well transistor.
2 . The high voltage switch circuit of claim 1 , wherein the output node is connected to a drain of the triple well transistor, and the internal power voltage is applied to a source and a p-well of the triple well transistor.
3 . The high voltage switch circuit of claim 2 , wherein the internal power voltage is applied to an n-well surrounding the p-well.Join the waitlist — get patent alerts
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