Circuit support structure with integrated isolation circuitry

Abstract

A circuit support structure includes a first metal layer, a second metal layer, isolation material containing the first and second metal layers, an isolation circuit, a first plurality of contact pads, and a second plurality of contact pads. The isolation circuit includes a first circuit element in the first metal layer and a second circuit element in the second metal layer and electrically isolated from the first circuit element by the isolation material. The first plurality of contact pads is adapted to be coupled to a first integrated circuit on the circuit support structure and includes a first contact pad electrically coupled to the first circuit element. The second plurality of contact pads is adapted to be coupled to a second integrated circuit on the circuit support structure and includes a second contact pad electrically coupled to the second circuit element.

What is claimed is: 
     
         1 . A method comprising:
 forming a metal layer of a circuit support structure, in which the metal layer includes a metal segment having first and second ends;   forming first and second contact pads on a first side of the circuit support structure;   connecting the first and second contact pads to the respective first and second ends of the metal segment;   forming a third contact pad on the first side of the circuit support structure;   forming a fourth contact pad on a second side of the circuit support structure opposite to the first side;   connecting the third and fourth contact pads with a via; and   surrounding the metal layer with an isolation material.   
     
     
         2 . The method of  claim 1 , wherein the isolation material includes a mold compound. 
     
     
         3 . The method of  claim 1 , wherein the metal segment is a first metal segment, and the metal layer further includes a second metal segment coupled between the first metal segment and the first contact pad. 
     
     
         4 . The method of  claim 1 , further comprising connecting a bond wire between the first contact pad and the metal segment. 
     
     
         5 . The method of  claim 1 , wherein the metal segment forms a winding. 
     
     
         6 . The method of  claim 1 , wherein the metal segment is a first metal segment, and the metal layer includes a second metal segment forming a terminal of a capacitor. 
     
     
         7 . The method of  claim 1 , further comprising:
 mounting an integrated circuit on the circuit support structure; and   forming interconnects between the integrated circuit and the first, second, and third contact pads.   
     
     
         8 . The method of  claim 7 , wherein mounting an integrated circuit on the circuit support structure includes flip chip mounting the integrated circuit on the circuit support structure. 
     
     
         9 . The method of  claim 7 , wherein at least a part of the integrated circuit is outside a footprint of the metal segment. 
     
     
         10 . The method of  claim 7 , wherein the integrated circuit is entirely outside the footprint of the metal segment. 
     
     
         11 . The method of  claim 7 , wherein the metal layer is a first metal layer, the metal segment is a first metal segment, the via is a first via, and the method further includes:
 forming a second metal layer of the circuit support structure, in which the second metal layer includes a second metal segment having third and fourth ends,   forming fifth and sixth contact pads on the first side of the circuit support structure;   connecting the fifth and sixth contact pads coupled to the respective third and fourth ends of the second metal segment;   forming a seventh contact pad on the first side of the circuit support structure;   forming an eighth contact pad on the second side of the circuit support structure;   connecting the seventh and eighth contact pads with a second via; and   surround the second metal layer with the isolation material, in which the isolation material isolates between the first and second metal segments.   
     
     
         12 . The method of  claim 11 , wherein the first and second metal segments form a transformer or a capacitor. 
     
     
         13 . The method of  claim 11 , wherein the first metal segment forms a first winding, and the second metal segment forms a second winding. 
     
     
         14 . The method of  claim 11 , wherein the integrated circuit is a first integrated circuit, the interconnects are first interconnects, and the method further comprises:
 mounting a second integrated circuit on the circuit support structure; and   forming second interconnects between the second integrated circuit and the fifth, sixth, and seventh contacts.   
     
     
         15 . The method of  claim 14 , wherein at least a part of the second integrated circuit is outside a footprint of the second metal segment. 
     
     
         16 . The method of  claim 14 , wherein the second integrated circuit is entirely outside the footprint of the second metal segment.