Light-emitting device

Abstract

It is an object of the present invention to provide a light-emitting device where periphery deterioration can be prevented from occurring even when an organic insulating film is used as an insulating film for the light-emitting device. In addition, it is an object of the present invention to provide a light-emitting device where reliability for a long period of time can be improved. A structure of an inorganic film, an organic film, and an inorganic film is not continuously provided from under a sealing material under a cathode for a light-emitting element. In addition, penetration of water is suppressed by defining the shape of the inorganic film that is formed over the organic film even when a structure of an inorganic film, an organic film, and an inorganic film is continuously provided under a cathode for a light-emitting element.

1 . (canceled) 
     
     
         2 . An active matrix type light-emitting device comprising a light-emitting element in a pixel portion, the active matrix type light-emitting device comprising:
 a first organic insulating film;   a first conductive layer having a region in contact with a top surface of the first organic insulating film;   a second conductive layer having a region in contact with a top surface of the first organic insulating film; and   a second organic insulating film having a region in contact with a top surface of the first conductive layer and a top surface of the second conductive layer,   wherein the first conductive layer is configured to be an anode of the light-emitting element,   wherein the second conductive layer includes a plurality of stacked conductive layers,   wherein the second conductive layer includes a plurality of openings between one side of a substrate of the light-emitting device and the pixel portion,   wherein the plurality of openings is overlapped with the second organic insulating film, and   wherein the second organic insulating film has a region in contact with the first organic insulating film in each of the plurality of openings.   
     
     
         3 . The active matrix type light-emitting device according to  claim 2 , wherein a width of the plurality of openings is 5 μm or more. 
     
     
         4 . The active matrix type light-emitting device according to  claim 2 , wherein the plurality of openings is not overlapped with a layer including a light-emitting material. 
     
     
         5 . The active matrix type light-emitting device according to  claim 2 , wherein the second conductive layer is overlapped with a cathode of the light-emitting element. 
     
     
         6 . The active matrix type light-emitting device according to  claim 2 , wherein the second conductive layer is configured to be a wiring having a region extending in the one side of the substrate. 
     
     
         7 . An active matrix type light-emitting device comprising a light-emitting element in a pixel portion, the active matrix type light-emitting device comprising:
 a first organic insulating film;   a first conductive layer having a region in contact with a top surface of the first organic insulating film;   a second conductive layer having a region in contact with a top surface of the first organic insulating film; and   a second organic insulating film having a region in contact with a top surface of the first conductive layer and a top surface of the second conductive layer,   wherein the first conductive layer is configured to be an anode of the light-emitting element,   wherein the second conductive layer includes a plurality of stacked conductive layers,   wherein the second conductive layer includes a plurality of openings between one side of a substrate of the light-emitting device and the pixel portion,   wherein the plurality of openings is overlapped with the second organic insulating film,   wherein the second organic insulating film has a region in contact with the first organic insulating film in each of the plurality of openings, and   wherein a periphery of the second conductive layer is overlapped with a periphery of the second organic insulating film at a region between the one side of the substrate and the pixel portion.   
     
     
         8 . The active matrix type light-emitting device according to  claim 7 , wherein a width of the plurality of openings is  5  pm or more. 
     
     
         9 . The active matrix type light-emitting device according to  claim 7 , wherein the plurality of openings is not overlapped with a layer including a light-emitting material. 
     
     
         10 . The active matrix type light-emitting device according to  claim 7 , wherein the second conductive layer is overlapped with a cathode of the light-emitting element. 
     
     
         11 . The active matrix type light-emitting device according to  claim 7 , wherein the second conductive layer is configured to be a wiring having a region extending in the one side of the substrate. 
     
     
         12 . An active matrix type light-emitting device comprising a light-emitting element in a pixel portion, the active matrix type light-emitting device comprising:
 a first organic insulating film;   a first conductive layer having a region in contact with a top surface of the first organic insulating film;   a second conductive layer having a region in contact with a top surface of the first organic insulating film; and   a second organic insulating film having a region in contact with a top surface of the first conductive layer and a top surface of the second conductive layer,   wherein the first conductive layer is configured to be an anode of the light-emitting element,   wherein the second conductive layer includes a plurality of stacked conductive layers,   wherein the second conductive layer includes a plurality of openings between one side of a substrate of the light-emitting device and the pixel portion,   wherein the plurality of openings is overlapped with the second organic insulating film,   wherein the second organic insulating film has a region in contact with the first organic insulating film in each of the plurality of openings, and   wherein, in a plan view, a distance between two openings among the plurality of openings is less than 1 mm.   
     
     
         13 . The active matrix type light-emitting device according to  claim 12 , wherein a width of the plurality of openings is 5 μm or more. 
     
     
         14 . The active matrix type light-emitting device according to  claim 12 , wherein the plurality of openings is not overlapped with a layer including a light-emitting material. 
     
     
         15 . The active matrix type light-emitting device according to  claim 12 , wherein the second conductive layer is overlapped with a cathode of the light-emitting element. 
     
     
         16 . The active matrix type light-emitting device according to  claim 12 , wherein the second conductive layer is configured to be a wiring having a region extending in the one side of the substrate.