Non-linear tethers for suspended devices

Abstract

A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures. A device structure can comprise a device over a sacrificial portion or cavity and a tether with a tether opening extending to the sacrificial portion or cavity. The tether or tether opening can have a T shape. The tether can have a tether length at least one third as large as a device length and the device can have a device length at least twice as large as a device width.

1 - 20 . (canceled) 
     
     
         21 . A device structure, comprising:
 a substrate having a sacrificial layer defining a sacrificial portion adjacent to an anchor portion;   a device disposed completely over the sacrificial portion, wherein the device has a device edge and a device end on the device edge, the device having a device length taken along the device edge;   a first tether that physically connects the device to the anchor portion; and   a second tether that physically connects the device to the anchor portion,   wherein the first tether is closer to the second tether than to the device end and the second tether is closer to the first tether than to the device end.   
     
     
         22 . The device structure of  claim 21 , wherein the device has a second device edge side having a device width, the device length is longer than the device width, and the first tether and the second tether are connected to the device along the device edge. 
     
     
         23 . The device structure of  claim 22 , wherein the device width is no greater than one half of the device length. 
     
     
         24 . The device structure of  claim 21 , wherein the tether has a tether length and the tether length is at least one third of the device length. 
     
     
         25 . The device structure of  claim 21 , wherein the substrate comprises silicon {100}. 
     
     
         26 . The device structure of  claim 21 , wherein the device has a device bottom adjacent to the substrate and the device bottom is bent, curved, curled, or warped. 
     
     
         27 . A device structure, comprising:
 a substrate;   a device disposed completely over a recess in or on the substrate, wherein the device has a device edge and a device end on the device edge, the device having a device length taken along the device edge;   a first tether that physically connects the device to an anchor portion disposed on the substrate; and   a second tether that physically connects the device to the anchor portion,   wherein the first tether and the second tether suspend the device over the recess and the first tether is closer to the second tether than to the device end and the second tether is closer to the first tether than to the device end.   
     
     
         28 . A device structure, comprising:
 a substrate having a sacrificial layer defining a sacrificial portion adjacent to an anchor portion;   a device disposed completely over the sacrificial portion;   a first tether that physically connects the device to the anchor portion; and   a second tether that physically connects the device to the anchor portion,   wherein the first tether is spatially separated from the second tether by a distance that is no greater than a combined length of the first tether and the second tether.   
     
     
         29 . The device structure of  claim 28 , wherein the device has a first device edge having a device length and a second device edge having a device width, the device length is longer than the device width, and the first tether and the second tether are connected to the device along the first device edge. 
     
     
         30 . The device structure of  claim 29 , wherein the device width is no greater than one half of the device length. 
     
     
         31 . The device structure of  claim 28 , wherein the first tether is closer to second tether than to an end of the device. 
     
     
         32 . The device structure of  claim 28 , wherein the substrate comprises silicon {100}. 
     
     
         33 . The device structure of  claim 28 , wherein the device has a device bottom adjacent to the substrate and the device bottom is bent, curved, curled, or warped. 
     
     
         34 . A device structure, comprising:
 a substrate;   a device disposed completely over a recess in or on the substrate;   a first tether that physically connects the device to an anchor portion disposed on the substrate; and   a second tether that physically connects the device to the anchor portion,   wherein the first tether is spatially separated from the second tether by a distance that is no greater than a combined length of the first tether and the second tether.   
     
     
         35 . The device structure of  claim 34 , wherein the device has a first edge having a device length and a second edge having a device width, the device length is longer than the device width, and the first tether and the second tether connect to the first edge. 
     
     
         36 . The device structure of  claim 35 , wherein the device width is no greater than one half of the device length. 
     
     
         37 . The device structure of  claim 35 , wherein the first tether and the second tether each have a tether length and the tether length is at least one third of the device length. 
     
     
         38 . The device structure of  claim 34 , wherein the substrate comprises silicon {100}. 
     
     
         39 . The device structure of  claim 34 , wherein the device has a device bottom adjacent to the substrate and the device bottom is bent, curved, curled, or warped.