US2023323541A1PendingUtilityA1
Electroless copper plating solution
Est. expiryNov 10, 2040(~14.3 yrs left)· nominal 20-yr term from priority
C23C 18/40
35
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
An object is to provide an electroless copper plating solution with excellent solution stability and easy composition control while being used in a neutral range. To achieve the object, a reducing electroless copper plating solution used in a neutral range is employed that contains a copper salt serving as a copper ion supply source, a complexing agent for chelating copper ions, a reducing agent, a surfactant, an aromatic compound containing nitrogen, and contains a tellurium compound serving as a deposition stabilizer, and that has a solution pH of 6 to 9.
Claims
exact text as granted — not AI-modified1 . A reducing electroless copper plating solution used in a neutral range,
comprising a copper salt serving as a copper ion supply source, a complexing agent for chelating copper ions, a reducing agent, a surfactant, an aromatic compound containing nitrogen, wherein the complexing agent for chelating copper ions is a phosphonic acid-based chelating agent, wherein the reducing agent is amine borane or a derivative thereof, and comprising a tellurium compound serving as a deposition stabilizer is used in a concentration range of 0.1 mg/L to 100 mg/L in terms of tellurium, and having a solution pH of 6 to 9.
2 . The electroless copper plating solution according to claim 1 , wherein the tellurium compound serving as a deposition stabilizer is at least one selected from the group consisting of telluric acid and a salt thereof, tellurous acid and a salt thereof, tellurium dioxide, tellurium trioxide, tellurium chloride, and dimethyl telluride.
3 . The electroless copper plating solution according to claim 1 , wherein the phosphonic acid-based chelating agent is used in a concentration range of 0.1 to 10 times the number of moles of copper in the electroless copper plating solution.
4 . The electroless copper plating solution according to claim 1 , wherein the reducing agent is at least one selected from the group consisting of dimethylamine borane, diethylamine borane, tert-butylamine borane, triethylamine borane, trimethylamine borane.
5 . The electroless copper plating solution according to claim 1 , wherein the surfactant is an anionic surfactant used in a concentration range of 0.01 mg/L to 1500 mg/L.
6 . The electroless copper plating solution according to claim 1 , wherein the aromatic compound containing nitrogen is used in a concentration range of 0.01 mg/L to 1000 mg/L.Join the waitlist — get patent alerts
Track US2023323541A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.