Method of manufacturing display device

Abstract

According to one embodiment, in a manufacturing method of a display device, a first lower electrode, a second lower electrode and a third lower electrode are formed. A rib having first aperture overlapping the first lower electrode, a second aperture overlapping the second lower electrode, and a third aperture overlapping the third lower electrode is formed. A first thin film including a first light emitting layer is formed on the first lower electrode. A second thin film including a second light emitting layer is formed on the second lower electrode. An area of the first aperture is larger than an area of the second aperture.

What is claimed is: 
     
         1 . A method of manufacturing a display device, the method comprising:
 preparing a processing substrate by forming a first lower electrode of a first sub-pixel, a second lower electrode of a second sub-pixel, and a third lower electrode of a third sub-pixel, and by forming a rib having a first aperture overlapping the first lower electrode, a second aperture overlapping the second lower electrode, and a third aperture overlapping the third lower electrode;   forming a first thin film including a first light emitting layer over the first sub-pixel, the second sub-pixel, and the third sub-pixel;   forming a first resist that exposes the first thin film in the second sub-pixel and the third sub-pixel and covers the first thin film in the first sub-pixel;   removing the first thin film in the second sub-pixel and the third sub-pixel using the first resist as a mask, remaining the first thin film in the first sub-pixel, exposing the second lower electrode from the second aperture, and exposing the third lower electrode from the third aperture;   removing the first resist;   forming a second thin film including a second light emitting layer over the first sub-pixel, the second sub-pixel, and the third sub-pixel;   forming a second resist that exposes the second thin film in the first sub-pixel and the third sub-pixel and covers the second thin film in the second sub-pixel;   removing the second thin film in the first sub-pixel and the third sub-pixel using the second resist as a mask, remaining the second thin film in the second sub-pixel, and exposing the third lower electrode from the third aperture; and   removing the second resist, wherein
 an area of the first aperture is larger than an area of the second aperture. 
   
     
     
         2 . The method of manufacturing a display device according to  claim 1 , the method further comprising, after the second resist is removed:
 forming a third thin film including a third light emitting layer over the first sub-pixel, the second sub-pixel, and the third sub-pixel;   forming a third resist that exposes the third thin film in the first sub-pixel and the second sub-pixel and covers the third thin film in the third sub-pixel;   removing the third thin film in the first sub-pixel and the second sub-pixel using the third resist as a mask, and remaining the third thin film in the third sub-pixel; and   removing the third resist, wherein
 the area of the second aperture is larger than an area of the third aperture. 
   
     
     
         3 . The method of manufacturing a display device according to  claim 1 , wherein the first light emitting layer is formed of a material that emits light in a blue wavelength range. 
     
     
         4 . The method of manufacturing a display device according to  claim 2 , wherein
 the first light emitting layer is formed of a material that emits light in a blue wavelength range,   the second light emitting layer is formed of a material that emits light in a green wavelength range, and   the third light emitting layer is formed of a material that emits light in a red wavelength range.   
     
     
         5 . The method of manufacturing a display device according to  claim 2 , wherein
 the first light emitting layer is formed of a material that emits light in a blue wavelength range,   the second light emitting layer is formed of a material that emits light in a red wavelength range, and   the third light emitting layer is formed of a material that emits light in a green wavelength range.   
     
     
         6 . The method of manufacturing a display device according to  claim 2 , wherein
 in the preparing the processing substrate,   a partition including a lower portion located on the rib and an upper portion located on the lower portion and protruding from a side surface of the lower portion is further formed.   
     
     
         7 . The method of manufacturing a display device according to  claim 6 , wherein the lower portion of the partition is formed of a conductive material. 
     
     
         8 . The method of manufacturing a display device according to  claim 7 , wherein
 in the forming the first thin film,   a first organic layer including the first light emitting layer is formed on each of the first lower electrode, the second lower electrode, and the third lower electrode,   a first upper electrode is formed on the first organic layer and is in contact with the lower portion of the partition,   a first cap layer is formed on the first upper electrode, and   a first sealing layer is formed on the first cap layer.   
     
     
         9 . The method of manufacturing a display device according to  claim 8 , wherein,
 in the forming the second thin film,   a second organic layer including the second light emitting layer is formed on the second lower electrode, the third lower electrode, and the first sealing layer in the first sub-pixel,   a second upper electrode is formed on the second organic layer and is in contact with the lower portion of the partition,   a second cap layer is formed on the second upper electrode, and   a second sealing layer is formed on the second cap layer.   
     
     
         10 . The method of manufacturing a display device according to  claim 9 , wherein
 in the forming the third thin film,   a third organic layer including the third light emitting layer is formed on the third lower electrode, the first sealing layer in the first sub-pixel, and the second sealing layer in the second sub-pixel,   a third upper electrode is formed on the third organic layer and is in contact with the lower portion of the partition,   a third cap layer is formed on the third upper electrode, and   a third sealing layer is formed on the third cap layer.   
     
     
         11 . The method of manufacturing a display device according to  claim 10 , wherein the first sealing layer, the second sealing layer, and the third sealing layer are formed of the same inorganic insulating material. 
     
     
         12 . The method of manufacturing a display device according to  claim 10 , wherein the rib, the first sealing layer, the second sealing layer, and the third sealing layer are formed of silicon nitride. 
     
     
         13 . A method of manufacturing a display device, the method comprising:
 preparing a processing substrate by forming a first lower electrode of a first sub-pixel, a second lower electrode of a second sub-pixel, and a third lower electrode of a third sub-pixel, and by forming a rib having a first aperture overlapping the first lower electrode, a second aperture overlapping the second lower electrode, and a third aperture overlapping the third lower electrode;   forming a first thin film including a first light emitting layer that emits light in a blue wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;   forming a first resist that exposes the first thin film in the second sub-pixel and the third sub-pixel and covers the first thin film in the first sub-pixel;   removing the first thin film in the second sub-pixel and the third sub-pixel using the first resist as a mask, remaining the first thin film in the first sub-pixel, exposing the second lower electrode from the second aperture, and exposing the third lower electrode from the third aperture;   removing the first resist;   forming a second thin film including a second light emitting layer that emits light in a green wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;   forming a second resist that exposes the second thin film in the first sub-pixel and the third sub-pixel and covers the second thin film in the second sub-pixel;   removing the second thin film in the first sub-pixel and the third sub-pixel using the second resist as a mask, remaining the second thin film in the second sub-pixel, and exposing the third lower electrode from the third aperture;   removing the second resist;   forming a third thin film including a third light emitting layer that emits light in a red wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;   forming a third resist that exposes the third thin film in the first sub-pixel and the second sub-pixel and covers the third thin film in the third sub-pixel;   removing the third thin film in the first sub-pixel and the second sub-pixel using the third resist as a mask, and remaining the third thin film in the third sub-pixel; and   removing the third resist.   
     
     
         14 . A method of manufacturing a display device, the method comprising:
 preparing a processing substrate by forming a first lower electrode of a first sub-pixel, a second lower electrode of a second sub-pixel, and a third lower electrode of a third sub-pixel, and by forming a rib having a first aperture overlapping the first lower electrode, a second aperture overlapping the second lower electrode, and a third aperture overlapping the third lower electrode;   forming a first thin film including a first light emitting layer that emits light in a blue wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;   forming a first resist that exposes the first thin film in the second sub-pixel and the third sub-pixel and covers the first thin film in the first sub-pixel;   removing the first thin film in the second sub-pixel and the third sub-pixel using the first resist as a mask, remaining the first thin film in the first sub-pixel, exposing the second lower electrode from the second aperture, and exposing the third lower electrode from the third aperture;   removing the first resist;   forming a second thin film including a second light emitting layer that emits light in a red wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;   forming a second resist that exposes the second thin film in the first sub-pixel and the third sub-pixel and covers the second thin film in the second sub-pixel;   removing the second thin film in the first sub-pixel and the third sub-pixel using the second resist as a mask, remaining the second thin film in the second sub-pixel, and exposing the third lower electrode from the third aperture;   removing the second resist;   forming a third thin film including a third light emitting layer that emits light in a green wavelength range over the first sub-pixel, the second sub-pixel, and the third sub-pixel;   forming a third resist that exposes the third thin film in the first sub-pixel and the second sub-pixel and covers the third thin film in the third sub-pixel;   removing the third thin film in the first sub-pixel and the second sub-pixel using the third resist as a mask, and remaining the third thin film in the third sub-pixel; and   removing the third resist.