Semiconductor device using one or more slots added to isolation region surrounding inductor for isolation improvement

Abstract

A semiconductor device includes a metal layer, a ground plane formed on the metal layer, a first inductor formed on the metal layer, and a first isolation region formed on the metal layer and arranged to separate the first inductor from the ground plane. The first isolation region includes a first main area surrounding the first inductor, and at least one first slot extended from the first main area.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a metal layer;   a ground plane, formed on the metal layer;   a first inductor, formed on the metal layer; and   a first isolation region, formed on the metal layer and arranged to separate the first inductor from the ground plane, wherein the first isolation region comprises:
 a first main area, surrounding the first inductor; and 
 at least one first slot, extended from the first main area. 
   
     
     
         2 . The semiconductor device of  claim 1 , further comprising:
 a second inductor, formed on the metal layer;   wherein the at least one first slot is configured to reduce a coupling coefficient of mutual inductance between the first inductor and the second inductor.   
     
     
         3 . The semiconductor device of  claim 2 , wherein a position of the at least one first slot depends on a relative position between the first inductor and the second inductor. 
     
     
         4 . The semiconductor device of  claim 2 , wherein a size of the at least one first slot depends on a compensation range of the coupling coefficient. 
     
     
         5 . The semiconductor device of  claim 2 , wherein the at least one first slot is configured to make the coupling coefficient equal to a zero value. 
     
     
         6 . The semiconductor device of  claim 2 , wherein a size of the at least one first slot is configured by a metal option. 
     
     
         7 . The semiconductor device of  claim 2 , wherein a size of the at least one first slot is configured by at least one metal-oxide-semiconductor (MOS) switch. 
     
     
         8 . The semiconductor device of  claim 2 , wherein the first inductor is a part of an oscillator, an amplifier, a balun, a transformer, a mixer or a divider. 
     
     
         9 . The semiconductor device of  claim 2 , wherein the first inductor is a part of a radio-frequency (RF) chip, and the second inductor is a part of the RF chip. 
     
     
         10 . The semiconductor device of  claim 2 , further comprising:
 a second isolation region, formed on the metal layer and arranged to separate the second inductor from the ground plane, wherein the second isolation region comprises:
 a second main area, surrounding the second inductor; and 
 at least one second slot, extended from the second main area. 
   
     
     
         11 . The semiconductor device of  claim 10 , wherein the at least one second slot is configured to reduce the coupling coefficient of mutual inductance between the first inductor and the second inductor. 
     
     
         12 . A semiconductor device comprising:
 a metal layer;   a ground plane, formed on the metal layer;   a first inductor, formed on the metal layer;   a second inductor, formed on the metal layer; and   a first isolation region, formed on the metal layer and arranged to separate the first inductor from the ground plane, wherein a shape of the first isolation region is configured to reduce a coupling coefficient of mutual inductance between the first inductor and the second inductor.   
     
     
         13 . The semiconductor device of  claim 12 , wherein the shape of the first isolation region is configured to make the coupling coefficient equal to a zero value. 
     
     
         14 . The semiconductor device of  claim 12 , wherein the first inductor is a part of an oscillator, an amplifier, a balun, a transformer, a mixer or a divider. 
     
     
         15 . The semiconductor device of  claim 12 , wherein the first inductor is a part of a radio-frequency (RF) chip, and the second inductor is a part of the RF chip. 
     
     
         16 . The semiconductor device of  claim 12 , further comprising:
 a second isolation region, formed on the metal layer and arranged to separate the second inductor from the ground plane;
 wherein a shape of the second isolation region is configured to reduce the coupling coefficient of mutual inductance between the first inductor and the second inductor.