Current sensor

Abstract

A current sensor is described comprising an integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one sensing element and at least one contact pad and a housing comprising material embedding the integrated circuit arranged for allowing electric connection to the at least two contact pads of the active side of the integrated circuit. The housing comprises at least one conductive via disposed outside the integrated circuit and connected to the at least one contact pad, for distributing signals from the at least one contact pad through the housing away from the active side of the integrated circuit.

1 . A sensor comprising:
 a semiconductor integrated circuit comprising an active side, the active side comprising at least one magnetic sensor and at least one contact pad;   a housing comprising material including mold compound embedding the semiconductor integrated circuit arranged for allowing electric connection to the at least one contact pad of the active side of the semiconductor integrated circuit;   a primary leadframe; and   a set of electric contacts for signal interchange;   wherein the active side of the semiconductor integrated circuit faces the primary leadframe, the semiconductor integrated circuit being electrically isolated from the primary leadframe, the at least one contact pad of the semiconductor integrated circuit further being electrically connected to electric contacts of the set, for transferring measurement signals to a secondary leadframe.   
     
     
         2 . The sensor according to  claim 1 , further comprising a redistribution layer for electrically connecting the at least one contact pad to the electric contacts of the set. 
     
     
         3 . The sensor according to  claim 1 , wherein the redistribution layer comprises a conductive track. 
     
     
         4 . The sensor according to  claim 1 , further comprising isolation material between the active side and the primary leadframe. 
     
     
         5 . The sensor according to  claim 4 , wherein the isolation material comprises polyimide. 
     
     
         6 . The sensor according to  claim 1 , wherein the sensor comprises a further circuit embedded in the housing and directly or indirectly electrically connected to set of electric contacts. 
     
     
         7 . The sensor according to  claim 6 , wherein the further circuit comprises a III-V semiconductor circuit. 
     
     
         8 . The sensor according to  claim 6 , wherein the further circuit is electrically connected to the semiconductor integrated circuit by a redistribution layer. 
     
     
         9 . The sensor according to  claim 1 , further comprising a solder bump for electrically connecting the at least one contact pad to the electric contacts of the set. 
     
     
         10 . The sensor according to  claim 9 , wherein the redistribution layer comprises a conductive track arranged between the at least one contact pad and the solder bump. 
     
     
         11 . A sensor comprising:
 a leadframe comprising a set of electric contacts;   a wafer level package subcomponent comprising:   a semiconductor integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one magnetic sensor and at least one contact pad;   a redistribution layer electrically connecting the at least one contact pad to the set of electric contacts, the redistribution layer comprising a conductive track; and   an isolation layer on the redistribution layer; and   a mold compound covering the wafer level package subcomponent.   
     
     
         12 . The sensor according to  claim 11 , wherein the isolation layer comprises polyimide. 
     
     
         13 . The sensor according to  claim 11 , wherein the conductive track is arranged between the at least one contact pad and a solder bump or a wire bond. 
     
     
         14 . The sensor according to  claim 11 , wherein the sensor comprises a further circuit embedded in the wafer level package subcomponent and electrically connected to the semiconductor integrated circuit. 
     
     
         15 . The sensor according to  claim 11 , wherein the conductive track is distal from the at least one magnetic sensor. 
     
     
         16 . A current sensor configured to sense a current through a current conductor, the sensor comprising:
 a leadframe comprising a set of electric contacts;   a wafer level package subcomponent comprising:   a semiconductor integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one magnetic sensor and at least one contact pad;   a redistribution layer electrically connecting the at least one contact pad to the set of electric contacts via a solder bump, the redistribution layer comprising a conductive track, the conductive track arranged between the at least one contact pad and the solder bump; and   an isolation layer on the redistribution layer.   
     
     
         17 . The sensor according to  claim 16 , wherein the isolation layer comprises polyimide. 
     
     
         18 . The sensor according to  claim 16 , wherein the sensor comprises a further circuit embedded in the wafer level package subcomponent and electrically connected to the semiconductor integrated circuit. 
     
     
         19 . The sensor according to  claim 18 , wherein the further circuit is electrically connected to the semiconductor integrated circuit by the redistribution layer. 
     
     
         20 . The sensor according to  claim 16 , wherein the conductive track is distal from the at least one magnetic sensor.