US2023307490A1PendingUtilityA1

Light emitting device

Assignee: INNOLUX CORPPriority: Jun 11, 2020Filed: Jun 1, 2023Published: Sep 28, 2023
Est. expiryJun 11, 2040(~13.9 yrs left)· nominal 20-yr term from priority
Inventors:Shu-Ming Kuo
H10W 90/00H10K 59/90H10H 29/142H10H 20/857H10H 20/815H10H 20/84H10H 20/82H10H 29/14H01L 27/156H01L 33/22H01L 33/12H01L 33/44H01L 33/62H10K 59/88
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Claims

Abstract

A light emitting device includes a light emitting diode chip. The light emitting diode chip includes a first light emitting diode and a second light emitting diode which are electrically connected with each other, and a filling material disposed on the first light emitting diode and the second light emitting diode. The first light emitting diode includes a first semiconductor layer. The filling material surrounds the first light emitting diode and the second light emitting diode.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A light emitting device, comprising:
 a light emitting diode chip, comprising:
 a first light emitting diode and a second light emitting diode which are electrically connected with each other, wherein the first light emitting diode comprises a first semiconductor layer; and 
 a filling material disposed on the first light emitting diode and the second light emitting diode, 
   wherein the filling material surrounds the first light emitting diode and the second light emitting diode.   
     
     
         2 . The light emitting device of  claim 1 , wherein the first light emitting diode and the second light emitting diode are connected in series. 
     
     
         3 . The light emitting device of  claim 1 , wherein the first light emitting diode further comprises a bonding pad. 
     
     
         4 . The light emitting device of  claim 3 , wherein the first semiconductor layer is located between the bonding pad and the filling material. 
     
     
         5 . The light emitting device of  claim 1 , wherein the second light emitting diode comprises a second semiconductor layer. 
     
     
         6 . The light emitting device of  claim 5 , wherein a portion of the filling material is disposed between the first semiconductor layer and the second semiconductor layer. 
     
     
         7 . The light emitting device of  claim 1 , wherein the light emitting diode chip further comprises a conductive material electrically connected between the first light emitting diode and the second light emitting diode.

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