Semiconductor device

Abstract

An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

1 . A semiconductor device comprising:
 a transistor comprising:
 a source electrode and a drain electrode; 
 an oxide semiconductor layer overlapping with the source electrode and the drain electrode; and 
 a gate insulating layer overlapping with the oxide semiconductor layer, and a capacitor, 
   wherein one of the source electrode and the drain electrode of the transistor and one electrode of the capacitor are electrically connected to each other.