Automated Optical Measurement System To Determine Semiconductor Properties

Abstract

Described are devices and methods for measuring semiconductor materials, devices, circuits, and systems. The device includes a probe head that accepts multiple optical assemblies. At least one optical assembly provides a light source, and at least one optical assembly provides a detector. Both are coupled to the probe head. The optical assemblies may be manually or automatically adjustable using kinematic mounts, and may include optical fibers for conveying light to and from a sample. Each optical assembly may include a lens stack or an objective. Illumination and collection assemblies may share a common focal point, and different subsets of assemblies may share different focal points. The device may include a sample bed for imaging multiple samples at once, and may be coupled to a control system for automatically positioning the samples and/or the optical assemblies.

1 . A device for optically measuring properties of a semiconductor sample, the device comprising:
 a probe head configured to accept a plurality of optical assemblies;   one or more optical assemblies, each comprising a light source, coupled to the probe head and configured to direct light toward the semiconductor sample; and   one or more optical assemblies, each comprising a detector, coupled to the probe head and configured to detect light from the one or more light sources.   
     
     
         2 . The device of  claim 1  further comprising a sample bed for concurrently accepting multiple samples. 
     
     
         3 . The device of  claim 1  wherein the optical assemblies comprise a broadband optical light source and optics for detecting a response of a semiconductor. 
     
     
         4 . The device of  claim 3  wherein the optics for detecting a response of a semiconductor comprises optics for detecting a response of a semiconductor having a photoactive layer. 
     
     
         5 . The device of  claim 1  wherein the optical assemblies comprise a broadband light source and a detector configured to detect signals from the broadband light source. 
     
     
         6 . The device of  claim 1  wherein the optical assemblies comprise a monochromatic light source and a detector configured to detect signals from the monochromatic light source. 
     
     
         7 . The device of  claim 1  wherein the optical assemblies comprise a plurality of light sources and a detector that is configured to detect signals from multiple ones of the plurality of light sources. 
     
     
         8 . The device of  claim 1  wherein a number of light sources coupled to the probe head equals a number of detectors coupled to the probe head. 
     
     
         9 . The device of  claim 8  wherein each detector is configured to detect light from a corresponding one of the light sources. 
     
     
         10 . A probe head comprising means for concurrently making measurements of a semiconductor using one or more broadband light sources and one or more monochromatic light sources. 
     
     
         11 . The probe head of  claim 10  wherein at least one of the one or more monochromatic light sources is a laser light source. 
     
     
         12 . A measurement system comprising an interchangeable optical probe head configured to accept multiple sources and multiple detectors thereby allowing for concurrent measurements and imaging on multiple samples. 
     
     
         13 . The device of  claim 12  further comprising a processor configured to perform data management and/or a data analysis methodology applicable to any optically active material. 
     
     
         14 . A method of determining physical parameters of a semiconductor sample, the method comprising:
 (a) accepting the semiconductor sample;   (b) concurrently exposing the semiconductor sample to a plurality of light sources;   (c) concurrently detecting light from the plurality of light sources; and   (d) determining a range of physical parameters of the semiconductor sample.   
     
     
         15 . The method of  claim 14  wherein:
 accepting the semiconductor sample comprises accepting a plurality of partially completed semiconductors; and 
 determining a range of physical parameters of the semiconductor sample comprises determining the range of physical parameters of the plurality of partially completed semiconductors.