Imaging device, stacked imaging device, and solid-state imaging apparatus

Abstract

An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.

What is claimed is: 
     
         1 . An light detecting device comprising:
 a photoelectric conversion unit in which a photoelectric conversion layer is disposed between a first electrode and a second electrode,   wherein   a semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and   a formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.   
     
     
         2 . The light detecting device according to  claim 1 , wherein the formation energy is defined as a reaction energy at a time when the inorganic oxide semiconductor material having a crystalline structure is generated on a basis of a plurality of starting materials for forming an inorganic oxide semiconductor material having a crystalline structure. 
     
     
         3 . The light detecting device according to  claim 1 , wherein each of the starting materials contains metallic atoms that constitute the inorganic oxide semiconductor material. 
     
     
         4 . The light detecting device according to  claim 3 , wherein the metallic element forming the inorganic oxide semiconductor material has a closed-shell d orbital. 
     
     
         5 . The light detecting device according to  claim 3 , wherein each of the starting materials is formed with an oxide formed with the metallic atoms constituting the inorganic oxide semiconductor material and oxygen atoms. 
     
     
         6 . The light detecting device according to  claim 3 , wherein the metallic atoms are metallic atoms selected from the group consisting of copper, silver, gold, zinc, gallium, germanium, indium, tin, and thallium. 
     
     
         7 . The light detecting device according to claim  63 , wherein the metallic atoms are metallic atoms selected from the group consisting of copper, silver, zinc, gallium, germanium, and tin. 
     
     
         8 . The light detecting device according to  claim 1 , wherein the semiconductor material layer includes Ga x1 Sn y1 O, and satisfies
   0.28≤[ y 1/( x 1+ y 1)]≤0.38.
   
     
     
         9 . An light detecting device comprising:
 a photoelectric conversion unit in which a photoelectric conversion layer is disposed between a first electrode and a second electrode,   wherein   a semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer,   a composition of the inorganic oxide semiconductor material having an amorphous structure is formed with N kinds of metallic atoms M n  (n=2, 3, . . . , N) and oxygen atoms, and   a reaction energy at a time when an inorganic oxide semiconductor material having a crystalline structure is generated on a basis of a reaction of N kinds of metallic oxides formed with the metallic atoms M n  and oxygen atoms has a positive value.   
     
     
         10 . The light detecting device according to  claim 9 , wherein the metallic atoms have a closed-shell d orbital. 
     
     
         11 . The light detecting device according to  claim 9 , wherein the metallic atoms are metallic atoms selected from the group consisting of copper, silver, gold, zinc, gallium, germanium, indium, tin, and thallium. 
     
     
         12 . The light detecting device according to  claim 9 , wherein the metallic atoms are metallic atoms selected from the group consisting of copper, silver, zinc, gallium, germanium, and tin. 
     
     
         13 . The light detecting device according to  claim 9 , wherein the semiconductor material layer includes Ga x1 Sn y1 O, and satisfies
   0.28≤[ y 1/( x 1+ y 1)]<0.38.
   
     
     
         14 . A stacked light detecting device comprising at least one light detecting device according to  claim 1 . 
     
     
         15 . A solid-state imaging apparatus comprising a plurality of light detecting devices according to  claim 1 . 
     
     
         16 . A solid-state imaging apparatus comprising a plurality of stacked light detecting devices according to  claim 14 .