Isolated temperature sensor device package

Abstract

In a described example, an apparatus includes: a package substrate having a die pad configured for mounting a semiconductor die, a first lead connected to the die pad, and a second lead spaced from and electrically isolated from the die pad; a spacer dielectric mounted on the die pad; a semiconductor die including a temperature sensor mounted on the spacer dielectric; electrical connections coupling the semiconductor die to the second lead; and mold compound covering the semiconductor die, the die pad, the electrical connections, and a portion of the package substrate, with portions of the first lead and portions of the second lead exposed from the mold compound to form terminals for a packaged temperature sensor device.

What is claimed is: 
     
         1 . A semiconductor package comprising:
 a package substrate having a die pad, a first lead connected to the die pad, and a second lead electrically isolated from the die pad;   a dielectric component on the die pad;   a semiconductor die including a temperature sensor on the dielectric component;   electrical connections coupling the semiconductor die to the second lead; and   mold compound covering the semiconductor die, the die pad, the electrical connections, and a portion of the package substrate, with portions of the first lead and portions of the second lead exposed from the mold compound to form terminals of the semiconductor package.   
     
     
         2 . The semiconductor package of  claim 1 , wherein the dielectric component comprises aluminum nitride. 
     
     
         3 . The semiconductor package of  claim 1 , wherein the dielectric component is one selected from: aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), hafnium oxide (HfO 2 ), and barium titanium oxide (BTO), molybdenum disulfide (MoS), silicon carbide (SiC), composites of these, and glass. 
     
     
         4 . The semiconductor package of  claim 1  wherein the dielectric component has a thermal conductivity of greater than 10 W/mK. 
     
     
         5 . The semiconductor package of  claim 1 , wherein the dielectric component has a thickness of between 50 microns and 500 microns. 
     
     
         6 . The semiconductor package of  claim 1 , wherein the dielectric component has a thickness selected from 125 microns and 250 microns. 
     
     
         7 . The semiconductor package of  claim 6 , wherein the dielectric component is AN. 
     
     
         8 . The semiconductor package of  claim 1 , wherein the semiconductor die is mounted in a recess in a surface of the dielectric component. 
     
     
         9 . The semiconductor package of  claim 1 , wherein the electrical connections further comprise bond wires. 
     
     
         10 . The semiconductor package of  claim 1 , wherein the dielectric component is mounted to the die pad by a conductive die attach. 
     
     
         11 . The semiconductor package of  claim 1 , wherein the dielectric component is mounted to the die pad by a non-conductive die attach film. 
     
     
         12 . The semiconductor package of  claim 1 , wherein the semiconductor die is mounted to the dielectric component by a conductive die attach. 
     
     
         13 . The semiconductor package of  claim 1 , wherein the semiconductor die is mounted to the dielectric component by a non-conductive die attach film. 
     
     
         14 . The semiconductor package of  claim 1 , wherein the dielectric component has metal platings on a first surface and on a second opposite surface, and the dielectric component is mounted to the die pad by solder between the first surface and the die pad, and the semiconductor die is mounted to the second surface of the dielectric component by solder. 
     
     
         15 . The semiconductor package of  claim 1 , wherein the package substrate is one of a lead frame, a partially etched lead frame, a pre-molded lead frame (PMLF), a molded interconnect substrate (MIS), and a printed circuit board. 
     
     
         16 . A packaged temperature sensor device, comprising:
 a first lead to sense a temperature of a conductive element;   a die pad of a metal lead frame that is connected to the first lead;   a spacer dielectric attached to the die pad;   a semiconductor die attached to the spacer dielectric;   a second lead of spaced from the die pad and the first lead, and electrically isolated from the die pad;   bond wires connecting the second lead to the semiconductor die; and   mold compound covering the semiconductor die, the die pad, the spacer dielectric, and portions of the first lead and the second lead, while additional portions of the first lead and the second lead are exposed from the mold compound, forming terminals for the packaged temperature sensor device, wherein a cross-sectional length of the spacer dielectric is more than a cross-sectional length of the semiconductor die.   
     
     
         17 . The packaged temperature sensor device of  claim 16  wherein the spacer dielectric has a thermal conductivity that is greater than 10 W/mK. 
     
     
         18 . The packaged temperature sensor device of  claim 16 , wherein the spacer dielectric is one selected from aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), hafnium oxide (HfO 2 ), and barium titanium oxide (BTO) molybdenum disulfide (MoS), silicon carbide (SiC), composites of these, and glass. 
     
     
         19 . The packaged temperature sensor device of  claim 16 , wherein the spacer dielectric has a thickness between 50 microns and 500 microns. 
     
     
         20 . The packaged temperature sensor device of  claim 16 , wherein spacer dielectric is attached to the die attach pad via a die attach material, and wherein a cross-sectional length of the die attach material is more than the cross-sectional length of the die and less than the cross-sectional length of the dielectric spacer.