System and method for heating semiconductor wafers

Abstract

A semiconductor process system includes a wafer support and a control system. The wafer support includes a plurality of heating elements and a plurality of temperature sensors. The heating elements heat a semiconductor wafer supported by the support system. The temperature sensors generate sensor signals indicative of a temperature. The control system selectively controls the heating elements responsive to the sensor signals.

1 . A method, comprising:
 supporting a semiconductor wafer on a top surface of a wafer support;   heating the semiconductor wafer with an array of heating elements positioned within the wafer support below the top surface;   generating, for each heating element, first sensor signals with a respective first temperature sensor each positioned within the wafer support;   selectively controlling each heating element via first electrical connectors coupled to the heating elements; a plurality of first electrical connectors coupled to the heating elements and configured to enable selective control of individual heating elements; and   passing the first sensor signals from the wafer support via a plurality of second electrical connectors coupled to the first temperature sensors.   
     
     
         2 . The method of  claim 1 , wherein the each heating element includes a respective heating coil. 
     
     
         3 . The method of  claim 2 , comprising generating, for each heating element, second sensor signals with a respective second temperature sensor positioned within the wafer support. 
     
     
         4 . The method of  claim 3 , wherein, for each heating element, the respective first temperature sensor is positioned below the respective second temperature sensor. 
     
     
         5 . The method of  claim 4 , wherein, for each heating element, the first sensor signals are indicative of a temperature of the heating coil. 
     
     
         6 . The method of  claim 5 , wherein, for each heating element, the second sensor signals are indicative of a temperature of a region of the semiconductor wafer above the heating element. 
     
     
         7 . The method of  claim 6 , wherein each heating element includes a ceramic material encasing the heating coil. 
     
     
         8 . The method of  claim 7 , wherein the ceramic material encases the first and second temperature sensors. 
     
     
         9 . The method of  claim 1 , further comprising holding the semiconductor wafer in place on the wafer support via electrostatic force with a conductive surface of the wafer support. 
     
     
         10 . The method of  claim 1 , further comprising holding the wafer in place on the wafer support with a clamp. 
     
     
         11 . The method of  claim 1 , wherein the first temperature sensors include thermocouples. 
     
     
         12 . A method comprising, comprising:
 supporting a semiconductor wafer with a wafer support positioned in a semiconductor process chamber;   heating the semiconductor wafer with an array of heating elements positioned within the wafer support;   generating, for each heating element, first sensor signals with a respective first temperature sensor positioned within the wafer support; and   selectively operating, with a control system communicatively coupled to the heating elements and the first temperature sensors each heating element responsive, at least in part, to the first sensor signal. with a control system.   
     
     
         13 . The method of  claim 12 , comprising operating, with the control system, the heating elements to generate an even temperature distribution on a surface of the semiconductor wafer. 
     
     
         14 . The method of  claim 12 , comprising operating, with the control system, the heating elements to selectively heat some regions of the semiconductor wafer more than other regions. 
     
     
         15 . The method of  claim 12 , further comprising:
 performing a semiconductor process on the wafer with semiconductor process equipment communicatively coupled to the control system; and   adjusting, with the control system, the semiconductor process equipment responsive to the first sensor signals.   
     
     
         16 . The method of  claim 12 , comprising generating, for each heating element, second sensor signals with a respective second temperature sensor positioned within the wafer support. 
     
     
         17 . The method of  claim 16 , wherein, for each heating element, the first sensor signals are indicative of a temperature of the heating element, wherein the second sensor signals are indicative of a temperature of a region of the semiconductor wafer above the heating element. 
     
     
         18 . A method, comprising:
 supporting a semiconductor wafer with a wafer support positioned within a semiconductor process chamber;   performing a semiconductor process on the wafer within the semiconductor process chamber;   heating the semiconductor wafer during the semiconductor process with a plurality of heating elements positioned within the wafer support;   generating, for each heating element, first sensor signals with a respective first temperature sensor positioned within the wafer support; and   selectively controlling individual heating elements, with a control system, responsive to the first sensor signals.   
     
     
         19 . The method of  claim 18 , further comprising:
 generating, for each heating element, second sensor signals with a respective second temperature sensor positioned within the wafer support; and   selectively controlling individual heating elements, with the control system, responsive to the second sensor signals.   
     
     
         20 . The method of  claim 18 , further comprising, adjusting the semiconductor process, with the control system, responsive to the first sensor signals.