Solar cell, method for producing same and solar module

Abstract

A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiO x N y ) material, where x>y. The second passivation layer includes a first silicon nitride (Si m N n ) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiO i N j ) material, where a ratio of i/j∈[0.97, 7.58].

What is claimed is: 
     
         1 . A solar cell, comprising:
 an N-type substrate;   a P-type emitter formed at a front surface of the N-type substrate;   a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the N-type substrate; wherein the first passivation layer comprises a first silicon oxynitride SiO x N y  material; the second passivation layer comprises a first silicon nitride Si m N n  material; and the third passivation layer comprises a second silicon oxynitride SiO i N j  material, wherein a first ratio of x/y is in a range of 1.5 to 3, a second ratio of m/n is in a range of 3 to 5.41, and a third ratio of i/j is in a range of 0.97 to 7.58; and   a passivated contact structure formed on a rear surface of the N-type substrate.   
     
     
         2 . The solar cell according to  claim 1 , wherein a ratio of the third ratio of i/j to the first ratio of x/y is in a range of 0.57 to 4.95. 
     
     
         3 . The solar cell according to  claim 1 , wherein the first passivation layer has a thickness of 8 nm˜20 nm in a direction perpendicular to the N-type substrate and has a first refractive index of 1.61 to 1.71. 
     
     
         4 . The solar cell according to  claim 1 , wherein the second passivation layer has a thickness of 40 nm˜60 nm in a direction perpendicular to the N-type substrate. 
     
     
         5 . The solar cell according to  claim 1 , wherein the third passivation layer has a thickness not greater than 50 nm in a direction perpendicular to the N-type substrate. 
     
     
         6 . The solar cell according to  claim 1 , wherein a first refractive index of the first passivation layer is 1.61˜1.71, a second refractive index of the second passivation layer is 1.98˜2.2 and a third refractive index of the third passivation layer is 1.56˜1.87. 
     
     
         7 . The solar cell according to  claim 1 , wherein the solar cell further includes:
 a fourth passivation layer on a surface of the passivated contact structure away from the N-type substrate, wherein a material of the fourth passivation layer comprises a second silicon nitride Si a N b  material, wherein a fourth ratio of a/b is 3.82˜6.37.   
     
     
         8 . The solar cell according to  claim 7 , wherein a refractive index of the fourth passivation layer is 2.04˜2.2, and the fourth passivation layer has a thickness of 60 nm˜100 nm in a direction perpendicular to the rear surface of the N-type substrate. 
     
     
         9 . The solar cell according to  claim 7 , wherein the fourth passivation layer comprises a plurality of sub-layers, wherein refractive indexes of the plurality of sub-layers increase in a direction from the fourth passivation layer toward the substrate. 
     
     
         10 . The solar cell according to  claim 1 , wherein the second passivation layer comprises a plurality of sub-layers, and refractive indexes of the plurality of sub-layers increase in a direction from the second passivation layer to the N-type substrate. 
     
     
         11 . The solar cell according to  claim 1 , wherein the solar cell further includes an interface passivation layer and a field passivation layer sequentially over the rear surface of the N-type substrate in a direction away from the N-type substrate, wherein a material of the interface passivation layer includes a silicon oxide material. 
     
     
         12 . The solar cell according to  claim 1 , wherein the third passivation layer has a thickness of 10 nm˜20 nm in the direction perpendicular to the substrate. 
     
     
         13 . The solar cell according to  claim 1 , wherein the third passivation layer has a thickness of 37 nm˜50 nm in the direction perpendicular to the N-type substrate. 
     
     
         14 . A solar module, comprising a plurality of solar cells connected with one another, wherein the plurality of solar cells include at least one solar cell according to  claim 1 . 
     
     
         15 . The solar module according to  claim 14 , wherein a ratio of the third ratio of i/j to the first ratio of x/y is in a range of 0.57 to 4.95. 
     
     
         16 . The solar module according to  claim 14 , wherein the first passivation layer has a thickness of 8 nm˜20 nm in a direction perpendicular to the N-type substrate and has a first refractive index of 1.61 to 1.71. 
     
     
         17 . The solar module according to  claim 14 , wherein a first refractive index of the first passivation layer is 1.61˜1.71, a second refractive index of the second passivation layer is 1.98˜2.2 and a third refractive index of the third passivation layer is 1.56˜1.87. 
     
     
         18 . The solar module according to  claim 14 , wherein the solar cell further includes: a fourth passivation layer on a surface of the passivated contact structure away from the N-type substrate, wherein a material of the fourth passivation layer comprises a second silicon nitride Si a N b  material, wherein a fourth ratio of a/b is 3.82˜6.37. 
     
     
         19 . The solar module according to  claim 14 , wherein the second passivation layer comprises a plurality of sub-layers, and refractive indexes of the plurality of sub-layers increase in a direction from the second passivation layer to the N-type substrate. 
     
     
         20 . The solar module according to  claim 14 , wherein the first passivation layer and the P-type emitter have same charge polarity.