1,1,1-tris(organoamino)disilane compounds and method of preparing same

Abstract

A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

1 - 18 . (canceled) 
     
     
         19 . A method of forming a film, said method comprising:
 subjecting a film-forming composition to a deposition condition in the presence of a substrate, thereby forming the film on the substrate;   wherein the film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound having the following formula:
                     
 wherein: (i) each R 1  and R 2  is —CH 3 , such that the 1,1,1-tris(organoamino)disilane compound is 1,1,1-tris(dimethylamino)disilane, or (ii) each R 1  is H and each R 2  is —CH 2 CH 3 , such that the 1,1,1-tris(organoamino)disilane compound is 1,1,1-tris(ethylamino)disilane. 
   
     
     
         20 . (canceled) 
     
     
         21 . The method of forming a film of  claim 19 , wherein the film-forming composition further comprises at least one of an inert gas, molecular hydrogen, a silicon precursor, a carbon precursor, a nitrogen precursor, and an oxygen precursor. 
     
     
         22 . The method of forming a film of  claim 19 , wherein the film-forming composition further comprises a silicon precursor,
 wherein the silicon precursor comprises at least one of alkylsilanes, alkoxysilanes, aminosilanes, hydridosilanes, thiosilanes, halosilanes, silylamines, siloxanes, silylazides, silylhydrazines, disilanes, disilazanes, disiloxanes, and derivatives of the foregoing.   
     
     
         23 . The method of forming a film of  claim 19 , wherein the film-forming composition further comprises a carbon precursor,
 wherein the carbon precursor comprises C and H atoms, and   wherein the carbon precursor optionally comprises one or more of N, O, Si, or halogen atoms.   
     
     
         24 . The method of forming a film of  claim 19 , wherein the film-forming composition further comprises a nitrogen precursor,
 wherein the nitrogen precursor comprises N atoms, and   wherein the nitrogen precursor optionally comprises one or more of H, C, O, or halogen atoms.   
     
     
         25 . The method of forming a film of  claim 19 , wherein the film-forming composition further comprises an oxygen precursor,
 wherein the oxygen precursor comprises O atoms, and   wherein the oxygen precursor optionally comprises one or more of H, C, N, or halogen atoms.   
     
     
         26 . The method of forming a film of  claim 19 , further comprising controlling an orientation of a structure of the film, a manner in which the film coalesces, a uniformity of the film, a crystalline or non-crystalline structure of the film, or a combination thereof. 
     
     
         27 . The method of forming a film of  claim 19 , wherein the film formed is an amorphous, a polycrystalline, or a monocrystalline film. 
     
     
         28 . The method of forming a film of  claim 19 , wherein the film formed is a silicon nitrogen film, a silicon oxygen film, a silicon carbon film, or a combination thereof. 
     
     
         29 . The method of forming a film of  claim 19 , wherein the film formed is a silicon dioxide film.