US2023268185A1PendingUtilityA1

Manufacturing method of semiconductor device

Assignee: DENSO CORPPriority: Feb 22, 2022Filed: Jan 19, 2023Published: Aug 24, 2023
Est. expiryFeb 22, 2042(~15.6 yrs left)· nominal 20-yr term from priority
H10P 72/7422H10P 72/7416H10P 72/7402H10P 52/00H10W 42/121H10P 54/00H10P 72/7442H10P 72/74H01L 21/304H01L 21/6836H01L 2221/68327H01L 2221/6834
48
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Claims

Abstract

A manufacturing method of a semiconductor device, includes: preparing a wafer having a first surface on which a plurality of semiconductor elements is formed and to which a support plate is attached through an adhesive; grinding a second surface of the wafer opposite to the first surface in a state where the support plate is attached to the first surface of the wafer; forming a vertical crack inside the wafer and along a boundary between the adjacent semiconductor elements by pressing a scribe wheel against the wafer along the boundary; separating the support plate from the wafer while leaving the adhesive on the first surface of the wafer; cleaving the wafer along the boundary by pressing a breaking bar against the wafer over the adhesive and along the boundary; and removing the adhesive from at least one of the semiconductor elements divided from the wafer by the cleaving.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A manufacturing method of a semiconductor device, comprising:
 preparing a wafer having a first surface on which a plurality of semiconductor elements is formed and to which a support plate is attached through an adhesive;   grinding a second surface of the wafer opposite to the first surface in a state where the support plate is attached to the first surface of the wafer;   forming a vertical crack inside the wafer and along a boundary between the adjacent semiconductor elements by pressing a scribe wheel against the wafer along the boundary;   separating the support plate from the wafer while leaving the adhesive on the first surface of the wafer;   cleaving the wafer along the boundary by pressing a breaking bar against the wafer over the adhesive and along the boundary; and   removing the adhesive from at least one of the semiconductor elements that has been divided from the wafer by the cleaving.   
     
     
         2 . The manufacturing method according to  claim 1 , wherein
 the separating of the support plate includes curing a surface layer of the adhesive, and separating the support plate from the adhesive.   
     
     
         3 . The manufacturing method according to  claim 1 , wherein
 the cleaving of the wafer along the boundary includes attaching a protective sheet on a surface of the adhesive before the pressing of the breaking bar against the wafer.   
     
     
         4 . The manufacturing method according to  claim 2 , wherein
 the cleaving of the wafer along the boundary includes attaching a protective sheet on a surface of the adhesive before the pressing of the breaking bar against the wafer.

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