US2023268177A1PendingUtilityA1
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
Est. expiryJun 28, 2037(~10.9 yrs left)· nominal 20-yr term from priority
Inventors:Koji Kamei
H10P 14/2924H10P 14/2904H10P 14/20H10P 14/3408H10P 14/2926H10P 90/00H10D 62/8325H10D 62/57H10D 62/40C01B 32/90H01L 21/02529C23C 16/325C30B 25/20C30B 29/36H01L 21/02378H01L 21/02428H01L 21/02634H01L 29/04H01L 29/1608H01L 29/34C01B 32/956C30B 25/186
70
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A SiC epitaxial wafer comprising:
a 4H—SiC single crystal substrate which has
a surface with an off angle with respect to a c-plane as a main surface and
a bevel part on a peripheral part; and
a SiC epitaxial film having a film thickness of 20 μm or more, which is formed on the 4H—SiC single crystal substrate, wherein the bevel part includes a slope part continuous from the main surface and an outer peripheral edge part, and a width of the slope part is 150 μm or more.
2 . The SiC epitaxial wafer according to claim 1 ,
wherein the SiC epitaxial film is formed on the main surface and the bevel part of the substrate.Join the waitlist — get patent alerts
Track US2023268177A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.