Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process

Abstract

A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.

What is claimed is: 
     
         1 . A method of depositing a ruthenium-containing film on a substrate by a cyclical deposition process, the method comprising:
 contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor; and   contacting the substrate with a second vapor phase reactant comprising ruthenium;   performing a first additional processing step after contacting the substrate with the first vapor phase reactant, wherein the first additional processing step comprises contacting the substrate with an oxygen containing plasma or contacting the substrate with a third vapor phase reactant, wherein the third vapor phase reactant comprises an organic precursor,   wherein the ruthenium-containing film comprises ruthenium and at least one of platinum, palladium, aluminum, titanium, bismuth, zinc, barium, and cobalt.   
     
     
         2 . The method of  claim 1 , wherein the first additional processing step comprises contacting the substrate with an oxygen containing plasma. 
     
     
         3 . The method of  claim 2 , wherein the first additional processing step reduces the ruthenium content in the ruthenium-containing film. 
     
     
         4 . The method of  claim 1 , wherein the first additional processing step comprises contacting the substrate with a third vapor phase reactant, wherein the third vapor phase reactant comprises an organic precursor. 
     
     
         5 . The method of  claim 1 , wherein the first additional processing step occurs after contacting the substrate with the first vapor phase reactant and before contacting the substrate with the second vapor phase reactant. 
     
     
         6 . The method of  claim 4 , wherein the organic precursor comprises at least one of an alcohol, an aldehyde, or a carboxylic acid. 
     
     
         7 . The method of  claim 4 , wherein the organic precursor comprises an aldehyde having a general formula OHC—R4 CHO wherein R4 is a linear or branched C1-C20 saturated or unsaturated hydrocarbon. 
     
     
         8 . The method of  claim 4 , wherein the organic precursor comprises an aldehyde having a general formula R3-CHO, wherein R3 is selected from the group consisting of hydrogen, and linear or branched C1-C20 alkyl and alkenyl groups. 
     
     
         9 . The method of  claim 4 , wherein the organic precursor comprises an carboxylic acid having a general formula R5-COOH, wherein R5 is hydrogen or linear or branched C1-C20 alkyl or alkenyl group. 
     
     
         10 . The method of  claim 1 , wherein the metalorganic precursor comprises a metalorganic palladium precursor selected from the group consisting of Pd(thd) 2  and Pd(hfac) 2 . 
     
     
         11 . The method of  claim 1 , wherein the metalorganic precursor comprises a metalorganic platinum precursor selected from the group consisting of (trimethyl)methylcyclopentadienyl platinum, (trimethyl)cyclopentadienyl (C 5 H 5 )Pt(CH 3 ) 3 , Pt(acetylacetonate) 2 , Pt(PF 3 ) 4 , Pt(CO) 2 C 12 , cis-[Pt(CH 3 ) 2 ((CH 3 )NC) 2 ], and platinum hexafluoroacetylacetonate. 
     
     
         12 . The method of  claim 1 , wherein the metalorganic precursor comprises a metalorganic titanium precursor selected from the group consisting of tetrakis(dimethylamido) titanium (TDMAT), pentamethylcyclopentadienyltrimethoxy titanium (CpMe 5 Ti(OMe) 3 ), titanium methoxide (Ti(OMe) 4 ), titanium ethoxide (Ti(OEt) 4 ), titanium isopropoxide (Ti(OPr) 4 ), or titanium butoxide (Ti(OBu) 4 ). 
     
     
         13 . The method of  claim 1 , wherein the metalorganic precursor comprises a metalorganic bismuth precursor selected from the group consisting of [(dmb) 2 Bi—O—Bi(dmb) 2 ] 2 , tris(2,3-dimethyl-2-butoxy) bismuth(III), tris(tert-butoxy) bismuth(III), tri(isopropoxy) bismuth(III), Bi(N(SiMe 3 ) 2 ) 3 , Bi(thd) 3 , Bi(O t Bu) 3 , Bi(dmb) 3 , and Bi(CH 2 SiMe 3 ) 3 . 
     
     
         14 . The method of  claim 1 , wherein the metalorganic precursor comprises a metalorganic aluminum precursor selected from the group consisting of trimethylaluminum (TMA), trimethylaluminum (TEA), dimethylaluminum chloride (AlMe 2 Cl), dimethylaluminum isopropoxide (AlMe 2 OPr), or aluminum ethoxide (AlOEt) 3 . 
     
     
         15 . The method of  claim 1 , wherein the metalorganic precursor comprises a metalorganic zinc precursor selected from the group consisting of dimethylzinc (ZnMe 2 ), diethylzinc (ZnEt 2 ), methylzinc isopropoxide (ZnMe(OPr)), or zinc acetate (Zn(CH 3 CO 2 ) 2 ). 
     
     
         16 . The method of  claim 1 , wherein the metalorganic precursor comprises a metalorganic precursor selected from the group consisting of pentamethylcyclopentadienyltrimethoxy titanium (CpMe 5 Ti(OMe) 3 ), titanium methoxide (Ti(OMe) 4 ), titanium ethoxide (Ti(OEt) 4 ), titanium butoxide (Ti(OBu) 4 ), Bi(N(SiMe 3 ) 2 ) 3 , Bi(thd) 3 , Bi(O t Bu) 3 , or Bi(CH 2 SiMe 3 ) 3 . 
     
     
         17 . The method of  claim 1 , further comprising, prior to contacting the substrate with a first vapor phase reactant, contacting the surface of the substrate with an alcohol to increase the amount of carbon on a surface of the substrate. 
     
     
         18 . A semiconductor structure including a ruthenium-containing film deposited by the method of  claim 1 . 
     
     
         19 . A reaction system configured to perform the method of  claim 1 . 
     
     
         20 . The method of  claim 1 , wherein the metalorganic precursor comprises a metal selected from the group consisting of barium, cobalt, and combinations thereof.