Front side laser-based wafer dicing

Abstract

A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.

What is claimed is: 
     
         1 . A semiconductor die, comprising:
 a substrate including a semiconductor surface layer on a front side with active circuitry comprising at last one transistor therein and a back side,   wherein sidewall edges of the semiconductor die have at least one damage region pair comprising an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the semiconductor die as compared to the angled damage feature region.   
     
     
         2 . The semiconductor die of  claim 1 , wherein edges of the semiconductor die are exclusive of metal. 
     
     
         3 . The semiconductor die of  claim 1 , wherein the substrate comprises silicon. 
     
     
         4 . The semiconductor die of  claim 1 , wherein the at least one damage region pair comprises a first damage region pair space apart from a second damage region pair. 
     
     
         5 . The semiconductor die of  claim 1 , wherein the angled damage feature region has cracks that average at least 5 degrees more relative to the surface normal as compared to cracks in the damage region.