Method of chemical mechanical polish operation and chemical mechanical polishing system

Abstract

The present disclosure provides a method of chemical mechanical polish operation and a chemical mechanical polish operation system. The method includes obtaining a first input parameter and a second input parameter, wherein the first input parameter is associated with an additive of a slurry, and the second input parameter is associated with a characteristic of a process apparatus, determining an output parameter associated with the process apparatus based on the first input parameter and the second input parameter, securing a workpiece by a head over a platen in the process apparatus, supplying the slurry with the additive over the platen with the additive configured with the first parameter, and polishing a surface of the workpiece by operating the process apparatus configured with the output parameter.

What is claimed is: 
     
         1 . A method for polishing a workpiece, comprising:
 obtaining a first input parameter and a second input parameter, wherein the first input parameter is associated with an additive of a slurry, and the second input parameter is associated with a characteristic of a process apparatus;   determining an output parameter associated with the process apparatus based on the first input parameter and the second input parameter;   securing a workpiece by a head over a platen in the process apparatus;   supplying the slurry with the additive over the platen with the additive configured with the first parameter; and   polishing a surface of the workpiece by operating the process apparatus configured with the output parameter.   
     
     
         2 . The method of  claim 1 , wherein the first input parameter comprises a concentration of the additive in the slurry proximal to a chemical supplying apparatus configured to supply the slurry, and a concentration of the additive in the slurry proximal to the process apparatus. 
     
     
         3 . The method of  claim 1 , wherein obtaining the first input parameter comprises: obtaining the first input parameter by a sensor proximal to a chemical supplying apparatus configured to supply the slurry, or a sensor disposed in the process apparatus. 
     
     
         4 . The method of  claim 1 , wherein obtaining the second input parameter comprises: obtaining the second input parameter by a first thermal meter disposed at a top portion of the head. 
     
     
         5 . The method of  claim 1 , wherein obtaining the second input parameter comprises: obtaining the second input parameter by a second thermal meter disposed at a retaining ring of the head. 
     
     
         6 . The method of  claim 1 , wherein obtaining the second input parameter comprises: obtaining the second input parameter by a third thermal meter disposed in the platen. 
     
     
         7 . The method of  claim 1 , wherein the output parameter comprises at least one of the following: a rotational speed of the platen, a head pressure applied by the head, a downforce applied by a dresser against a pad over the platen, a temperature of working fluid flowing in the platen, or a flow rate of working fluid flowing in the platen. 
     
     
         8 . A method for polishing a workpiece, comprising:
 obtaining a first parameter associated with at least one of an additive of a slurry and a first characteristic of a process apparatus, and a second parameter associated with a second characteristic of the process apparatus;   determining a value of the second parameter in response to determining that the first parameter fails to comply with a predetermined specification;   securing a workpiece by a head over a platen in the process apparatus;   supplying the slurry with the additive over the platen; and   planarizing a surface of the workpiece by operating the process apparatus with the second parameter configured with the determined value.   
     
     
         9 . The method of  claim 8 , wherein the first parameter comprises a concentration of the additive in the slurry. 
     
     
         10 . The method of  claim 8 , wherein obtaining the first parameter comprises: obtaining the first parameter by a sensor attached to a conduit that supplies the slurry. 
     
     
         11 . The method of  claim 8 , wherein the second parameter comprises at least one of the following: a rotational speed of the platen, a head pressure applied by the head, or a downforce applied by a dresser against a pad over the platen. 
     
     
         12 . The method of  claim 8 , wherein the second parameter is determined by a computational model. 
     
     
         13 . The method of  claim 12 , further comprising obtaining a value of a third parameter after planarizing the workpiece, wherein the third parameter is associated with a performance of the planarizing of the surface of the workpiece. 
     
     
         14 . The method of  claim 13 , wherein the computational model is trained by the first parameter, the second parameter, and the third parameter. 
     
     
         15 . A chemical mechanical polish (CMP) operation system, comprising:
 a process apparatus comprising a platen;   a conduit, connected to a chemical supplying apparatus configured to supply a slurry;   a slurry arm connected to the conduit, wherein the slurry arm is configured to supply the slurry over the platen;   a sensor attached to the conduit, wherein the sensor in configured to obtain a concentration of an additive in the slurry;   a controller electrically connected to the platen, configured to receive a signal associated with the concentration of the additive in the slurry.   
     
     
         16 . The CMP operation system of  claim 15 , further comprising a pad over the platen, wherein at least a portion of the pad is transparent or semitransparent. 
     
     
         17 . The CMP operation system of  claim 15 , further comprising a head over the platen and a first thermal meter disposed at a top portion of the head. 
     
     
         18 . The CMP operation system of  claim 15 , further comprising:
 a head over the platen;   a second thermal meter on a retaining ring of the head, wherein the first thermal meter and the second thermal meter are configured to rotate around a first axis of the head.   
     
     
         19 . The CMP operation system of  claim 15 , further comprising:
 a third thermal meter disposed in the platen, wherein the third thermal meter is configured to rotate around a second axis of the platen.   
     
     
         20 . The CMP operation system of  claim 15 , further comprising an auxiliary compensation apparatus connected to the conduit at a position proximal to the process apparatus, wherein the auxiliary compensation apparatus is configured to supply the additive to the slurry.