Method for forming semiconductor structure

Abstract

A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer. The method also includes exposing a portion of the resist layer. The resist layer comprises an acid-labile group (ALG), a polar unit (PU) and a phenyl group. The method further includes developing the resist layer to form a patterned resist layer. In addition, the method includes forming a doped region in the material layer by using the patterned resist layer as a mask.

What is claimed is: 
     
         1 . A method for forming a semiconductor structure, comprising:
 forming a resist layer over a material layer;   exposing a portion of the resist layer, wherein the resist layer comprises an acid-labile group (ALG), a polar unit (PU) and a phenyl group;   developing the resist layer to form a patterned resist layer; and   forming a doped region in the material layer by using the patterned resist layer as a mask.   
     
     
         2 . The method for forming the semiconductor structure as claimed in  claim 1 , wherein the ALG, the PU and the phenyl group are bonded to a first polymer backbone. 
     
     
         3 . The method for forming the semiconductor structure as claimed in  claim 2 , wherein the first polymer backbone is a linear carbon backbone. 
     
     
         4 . The method for forming the semiconductor structure as claimed in  claim 2 , wherein the ALG cleaves from the first polymer backbone when performing a baking process on the resist layer. 
     
     
         5 . The method for forming the semiconductor structure as claimed in  claim 1 , wherein exposing the portion of the resist layer comprises using Extreme ultra-violet (EUV) light. 
     
     
         6 . The method for forming the semiconductor structure as claimed in  claim 1 , wherein the resist layer further comprises a photoacid generator (PAG) group. 
     
     
         7 . The method for forming the semiconductor structure as claimed in  claim 6 , wherein the ALG, the PU, the phenyl group and the PAG group are bonded to a first polymer backbone. 
     
     
         8 . The method for forming the semiconductor structure as claimed in  claim 6 , wherein the ALG, the PU, the phenyl group are bonded to a first polymer backbone, and the PAG group is bonded to a second polymer backbone. 
     
     
         9 . The method for forming the semiconductor structure as claimed in  claim 1 , wherein the resist layer further comprises a quencher group. 
     
     
         10 . The method for forming the semiconductor structure as claimed in  claim 9 , wherein the ALG, the PU, the phenyl group and the quencher group are bonded to a first polymer backbone. 
     
     
         11 . The method for forming the semiconductor structure as claimed in  claim 9 , wherein the ALG, the PU, the phenyl group are bonded to a first polymer backbone, and the quencher group is bonded to a second polymer backbone. 
     
     
         12 . A method for forming a semiconductor structure, comprising:
 forming a material layer over a substrate;   forming a resist layer over the material layer, wherein the resist layer comprises a first polymer, and the first polymer comprises a first carbon backbone and a photoacid generator (PAG) group bonded to the first carbon backbone;   patterning the resist layer to form a patterned resist layer;   doping a portion of the material layer by using the patterned resist layer as a mask to form a doped region; and   removing the patterned resist layer.   
     
     
         13 . The method for forming the semiconductor structure as claimed in  claim 12 , wherein the resist layer further comprises a quencher group dissolved in a solvent. 
     
     
         14 . The method for forming the semiconductor structure as claimed in  claim 12 , wherein patterning the resist layer comprises:
 irradiating the resist layer by Krypton Fluoride (KrF) excimer laser, Argon Fluoride (ArF) excimer laser, Fluoride (F 2 ) Excimer Laser, or Extreme ultra-violet (EUV) light;   performing a post-exposure-baking (PEB) process on the resist layer; and   developing the resist layer to form the patterned resist layer.   
     
     
         15 . The method for forming the semiconductor structure as claimed in  claim 14 , wherein the PEB process is performed for a period of time in a range from about 500 □s to about 30 seconds. 
     
     
         16 . The method for forming the semiconductor structure as claimed in  claim 12 , wherein the resist layer has a formula (I), 
       
         
           
           
               
               
           
         
         wherein ALG represents an acid-labile group, PU represents a polar unit, PAG represents a photoacid generator, and Q represents a quencher group, 
         R 1  is hydrogen or methyl (CH 3 ); and 
       
       each a, b, c, d, e independently represents a mole ratio of each monomer unit, and 
       a+b+c+d+e=1, a, d or e is independently in a range from 0.01 to 0.6, b, c is smaller than or equal to 0.3. 
     
     
         17 . A method for forming a semiconductor structure, comprising:
 forming a material layer over a substrate;   forming a resist layer over the material layer, wherein the resist layer comprises a first polymer, the first polymer comprises a first polymer backbone and an acid-labile group (ALG) and a polar unit (PU) bonded to the first polymer backbone;   exposing a portion of the resist layer to form an exposed region and an unexposed region by performing an exposure process;   etching a portion of the resist layer to form a patterned resist layer; and   performing an ion implantation process on the material layer by using the patterned resist layer as a mask to form a doped region.   
     
     
         18 . The method for forming the semiconductor structure as claimed in  claim 17 , wherein the resist layer further comprises a quencher group dissolved in a solvent. 
     
     
         19 . The method for forming the semiconductor structure as claimed in  claim 17 , wherein the resist layer further comprises a photoacid generator (PAG) group dissolved in a solvent. 
     
     
         20 . The method for forming the semiconductor structure as claimed in  claim 19 , wherein the PAG group includes a phenyl ring.