Semiconductor structure and manufacturing method for the same

Abstract

The present disclosure provides a micro electro mechanical system (MEMS) structure, including a device substrate having a first region and a second region different from the first region, a capping substrate bonded over the device substrate, a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure, a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure, an outgassing material, wherein the outgassing material includes a top surface and a sidewall exposed to the first cavity, the outgassing material is free from being in direct contact with the capping substrate, wherein the outgassing material includes a trench, and a passivation layer disposed over the device substrate, and is in direct contact with the outgassing material.

What is claimed is: 
     
         1 . A micro electro mechanical system (MEMs) structure, comprising:
 a device substrate having a first region and a second region different from the first region;   a capping substrate bonded over the device substrate;   a first cavity in the first region and between the device substrate and capping substrate, wherein the first cavity has a first cavity pressure;   a second cavity in the second region and between the device substrate and capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure;   a passivation layer in the first cavity;   an outgassing material over the passivation layer, wherein the outgassing material comprises a bottom portion and a plurality of blocks extending from the bottom portion, one of the plurality of blocks comprises a top surface and a sidewall exposed to the first cavity.   
     
     
         2 . The MEMs structure of  claim 1 , wherein the passivation layer comprises a recess, and the outgassing material is disposed in the recess. 
     
     
         3 . The MEMs structure of  claim 2 , wherein a bottom of the recess is exposed to the first cavity through the outgassing material. 
     
     
         4 . The MEMs structure of  claim 2 , wherein the outgassing material comprises a lower surface between the top surface and a bottom of the recess, the lower surface is exposed to the first cavity. 
     
     
         5 . The MEMs structure of  claim 1 , wherein the outgassing material comprises a material capable of generating hydrogen gas or argon at a bonding temperature for bonding the device substrate to the capping substrate. 
     
     
         6 . The MEMs structure of  claim 1 , wherein the top surface of the outgassing material concaves toward the device substrate. 
     
     
         7 . The MEMs structure of  claim 1 , wherein the outgassing material comprises oxides. 
     
     
         8 . The MEMs structure of  claim 1 , wherein the outgassing material is free from being in direct contact with the capping substrate. 
     
     
         9 . The MEMs structure of  claim 1 , wherein the outgassing material comprises a trench, a depth of the trench being greater than 10% of a thickness of the outgassing material. 
     
     
         10 . A micro electro mechanical system (MEMs) structure, comprising:
 a device substrate having a first region and a second region different from the first region;   a capping substrate bonded over the device substrate;   a first cavity in the first region and between the device substrate and the capping substrate, wherein the first cavity has a first cavity pressure;   a second cavity in the second region and between the device substrate and the capping substrate, wherein the second cavity has a second cavity pressure lower than the first cavity pressure;   a passivation layer in the first cavity;   an outgassing material in the passivation layer, wherein the outgassing material comprises a plurality of trenches, the trenches are separated from each other.   
     
     
         11 . The MEMs structure of  claim 10 , wherein a depth of one of the trenches being greater than 10% of a thickness of the outgassing material, and a sidewall of the trench is exposed to the first cavity. 
     
     
         12 . The MEMs structure of  claim 10 , wherein a bottom surface of one of the trenches is exposed to the first cavity. 
     
     
         13 . The MEMs structure of  claim 10 , wherein the outgassing material comprises a plurality of blocks, and at least two blocks respectively comprises one of the trenches. 
     
     
         14 . The MEMs structure of  claim 10 , wherein the passivation layer comprises an inner sidewall laterally surrounding the outgassing material. 
     
     
         15 . A micro electro mechanical system (MEMs) structure, comprising:
 a device substrate;   a passivation layer over the device substrate;   a plurality of blocks made of an outgassing material, wherein at least a portion of the outgassing material is laterally surrounded by the passivation layer;   a capping substrate bonded to the device substrate; and   a first cavity and a second cavity defined by the device substrate and the capping substrate, wherein at least a portion of the outgassing material is in the first cavity, wherein a pressure of the first cavity is different from a pressure of the second cavity.   
     
     
         16 . The MEMs structure of  claim 15 , wherein the plurality of blocks are separated from each other, and a trench is between two of the blocks. 
     
     
         17 . The MEMs structure of  claim 15 , wherein the plurality of blocks are connected. 
     
     
         18 . The MEMs structure of  claim 15 , wherein a thickness of one of the plurality of blocks is less than 20 μm. 
     
     
         19 . The MEMs structure of  claim 15 , wherein a spacing between two of the plurality of blocks is in a range from 0.1 μm to 20 μm. 
     
     
         20 . The MEMs structure of  claim 15 , further comprising a titanium layer over the device substrate.