Method for fabricating semiconductor device

Abstract

A method for fabricating a semiconductor device is provided, including following steps. Providing a staked layer of a semiconductor layer, a buried oxide layer and a silicon layer. Forming a silicon-based device layer comprising the silicon layer on the buried oxide layer. Forming a first interconnection layer over the silicon-based device layer. Forming a semiconductor-based device layer comprising the semiconductor layer on the buried oxide layer. Forming a second interconnection layer over the semiconductor-based device layer.

What is claimed is: 
     
         1 . A method for fabricating a semiconductor device, comprising:
 providing a staked layer of a semiconductor layer, a buried oxide layer and a silicon layer;   forming a silicon-based device layer comprising the silicon layer on the buried oxide layer;   forming a first interconnection layer over the silicon-based device layer;   forming a semiconductor-based device layer comprising the semiconductor layer on the buried oxide layer; and   forming a second interconnection layer over the semiconductor-based device layer.   
     
     
         2 . The method of  claim 1 , wherein the step of providing the staked layer comprising:
 forming the semiconductor layer on a supporting substrate;   forming the buried oxide layer on the semiconductor layer; and   forming the silicon layer on the buried oxide layer,   wherein the supporting substrate is removed to expose the semiconductor layer before the step of forming the semiconductor-based device layer.   
     
     
         3 . The method of  claim 2 , wherein the buried oxide layer and the silicon layer form a silicon-on-insulator (SOI) structure. 
     
     
         4 . The method of  claim 2 , wherein the buried oxide layer and the semiconductor layer form a semiconductor-on-insulator structure. 
     
     
         5 . The method of  claim 2 , wherein the semiconductor-based device layer comprises a semiconductor-based device on the semiconductor layer and the silicon-based device layer comprises a silicon-based device on the silicon layer. 
     
     
         6 . The method of  claim 1 , wherein the buried oxide layer has a thickness to mechanically support the semiconductor-based device layer by direct contact. 
     
     
         7 . The method of  claim 1 ,
 wherein the step of forming the first interconnection layer comprises forming a first route structure and a first inter-layer dielectric layer enclosing the first route structure,   wherein the step of forming the second interconnection layer comprises forming a second route structure and a second inter-layer dielectric layer enclosing the second route structure.   
     
     
         8 . The method of  claim 1 , further comprising:
 forming a third route structure in the buried oxide layer, to electrically connect the first route structure and the second route structure.   
     
     
         9 . The method of  claim 8 , wherein the third route structure comprises a via through the buried oxide layer to electrically connect the first route structure and the second route structure. 
     
     
         10 . The method of  claim 1 , wherein the semiconductor-based device layer comprises a semiconductor-based device operated in a radio frequency (RF) range.