US2023245901A1PendingUtilityA1
Ultrafast Laser Annealing of Thin Films
Assignee: THE GOVERNMENT OF THE UNITES STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVYPriority: Jan 26, 2021Filed: Feb 23, 2023Published: Aug 3, 2023
Est. expiryJan 26, 2041(~14.5 yrs left)· nominal 20-yr term from priority
H10P 95/90H01L 21/477H10N 70/235H10N 70/8833H10N 70/041
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Abstract
A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.
Claims
exact text as granted — not AI-modifiedWe claim:
1 . A method for selectively activating dopants in a material, comprising the steps of:
directing one or more laser pulses having a pulse width greater than one picosecond and less than 10 nanoseconds at a predetermined location or plurality of locations on a surface of an amorphous thin film situated on a substrate, each of the laser pulses having a predetermined laser wavelength, pulse width, pulse energy, pulse repetition frequency, excitation spot size, beam profile, and scanning rate; wherein the wavelength, pulse width, pulse energy, pulse repetition frequency, excitation spot size, beam profile, and scanning rate of the laser pulses produces a predetermined absorption of energy from the laser pulse into the amorphous thin film without absorption of the energy into the substrate; and wherein energy from the laser pulses is deposited into the amorphous thin film and locally thermalizes the amorphous thin film so as to activate dopants within the amorphous thin film in at least one predetermined area in the amorphous thin film without thermal diffusion to other areas of the film.Join the waitlist — get patent alerts
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