Slurry for polishing copper, display device manufacturing method using the same, and display device

Abstract

Embodiments provide a slurry for polishing copper, a manufacturing method of a display device which uses the slurry, and the display device. The slurry for polishing copper includes an abrasive, a catalyst including a single molecule having an iron ion, a polishing suppressant, and an oxidizing agent.

What is claimed is: 
     
         1 . A slurry for polishing copper, comprising:
 an abrasive;   a catalyst including a single molecule having an iron ion;   a polishing suppressant; and   an oxidizing agent.   
     
     
         2 . The slurry for polishing copper of  claim 1 , wherein the catalyst includes at least one selected from iron cyanide, iron nitride, iron citrate, iron chloride, iron sulfate, iron oxalate, iron bromide, and iron phosphate. 
     
     
         3 . The slurry for polishing copper of  claim 1 , wherein the polishing suppressant is a material that is combined with a metal ion with one ligand. 
     
     
         4 . The slurry for polishing copper of  claim 3 , wherein the polishing suppressant is at least one selected from arginine, ethylenediaminetetraacetic acid (EDTA), glycine, citric acid, diethylenetriamine pentamethylene phosphonic acid (DTPMPA), 1-hydroxy ethylidene-1, and 1-diphosphonic acid. 
     
     
         5 . The slurry for polishing copper of  claim 1 , wherein the oxidizing agent is at least one selected from hydrogen peroxide, ammonium persulfate, benzoyl peroxide, calcium peroxide, barium peroxide, and sodium peroxide. 
     
     
         6 . The slurry for polishing copper of  claim 1 , wherein the abrasive is at least one selected from silica, zirconia, alumina, ceria, and titania. 
     
     
         7 . The slurry for polishing copper of  claim 1 , wherein the catalyst and the oxidizing agent react to generate hydroxyl radicals. 
     
     
         8 . The slurry for polishing copper of  claim 1 , wherein the slurry for polishing copper has a pH in a range of about 8 to about 10. 
     
     
         9 . The slurry for polishing copper of  claim 1 , wherein a content of the catalyst is in a range of about 0.25 to about 2.0 wt %, based on the entire weight of the slurry for polishing copper. 
     
     
         10 . The slurry for polishing copper of  claim 1 , wherein a content of the oxidizing agent is in a range of about 0.5 to about 2.5 wt %, based on the entire weight of the slurry for polishing copper. 
     
     
         11 . The slurry for polishing copper of  claim 1 , wherein a content of the polishing suppressant is in a range of about 0.25 to about 2.0 wt %, based on the entire weight of the slurry for polishing copper. 
     
     
         12 . A display device comprising:
 a first interlayer insulating layer positioned on a substrate; and   at least one first signal line and one first side wall insulating layer positioned on the first interlayer insulating layer, wherein   the first side wall insulating layer is positioned between at least two of the first signal lines, and   a height measured from a surface of the substrate to a surface of the at least one first signal line along a first direction perpendicular to the surface of the substrate is a same as a height measured from the surface of the substrate to a surface of the first side wall insulating layer along the first direction perpendicular to the surface of the substrate.   
     
     
         13 . The display device of  claim 12 , wherein the at least one first signal line includes copper (Cu). 
     
     
         14 . The display device of  claim 12 , wherein a surface of at the least one first signal line and a surface of the first side wall insulating layer are each a polished surface. 
     
     
         15 . The display device of  claim 12 , wherein in at least one first signal line, an angle between the lower surface of the first signal line and the side surface of the first signal line is 90 degrees or more. 
     
     
         16 . The display device of  claim 12 , wherein the first interlayer insulating layer includes one or more of a silicon oxide and a silicon nitride. 
     
     
         17 . The display device of  claim 12 , further comprising:
 a second interlayer insulating layer positioned on the at least one first signal line and the first side wall insulating layer; and   at least one second signal line and a second side wall insulating layer positioned on the second interlayer insulating layer, wherein   the second side wall insulating layer is positioned between at least two of the second signal lines,   a height measured from the surface of the substrate to a surface of the at least one second signal line along the first direction perpendicular to the surface of the substrate is a same as a height measured from the surface of the substrate to a surface of the second side wall insulating layer along the first direction perpendicular to the surface of the substrate.   
     
     
         18 . The display device of  claim 17 , wherein the at least one second signal line includes copper (Cu). 
     
     
         19 . The display device of  claim 17 , wherein a surface of the at least one second signal line and a surface of the second side wall insulating layer are each a polished surface. 
     
     
         20 . The display device of  claim 17 , wherein in at least one second signal line, an angle between the lower surface of the second signal line and the side surface of the second signal line is 90 degrees or more. 
     
     
         21 . A manufacturing method of a display device comprising:
 forming a first interlayer insulating layer on a substrate;   forming a first side wall insulating layer including at least one depression on the first interlayer insulating layer;   forming a first conductive layer to cover at least one depression on the first interlayer insulating layer and the first side wall insulating layer; and   forming at least one first signal line by polishing the first conductive layer and the first side wall insulating layer, wherein   a height measured from a surface of the substrate to a surface of the at least one first signal line along a first direction perpendicular to the surface of the substrate is a same as a height from the surface of the substrate to a surface of the first side wall insulating layer along the first direction perpendicular to the surface of the substrate.   
     
     
         22 . The manufacturing method of the display device of  claim 21 , wherein
 the at least one first signal line includes copper (Cu), and   the polishing of the upper part of the first conductive layer is performed by using a slurry for polishing copper including:
 an abrasive; 
 a catalyst including a single molecule with an iron ion; 
 a polishing suppressant; and 
 an oxidizing agent. 
   
     
     
         23 . The manufacturing method of the display device of  claim 22 , further comprising:
 planarizing the surface of the first interlayer insulating layer, wherein   the planarization of the surface of the first interlayer insulating layer does not use the slurry for polishing copper.   
     
     
         24 . The manufacturing method of the display device of  claim 21 , wherein a surface of at least one signal line and a surface of the first side wall insulating layer are each polished by the polishing of the upper part of the first conductive layer. 
     
     
         25 . The manufacturing method of the display device of  claim 21 , further comprising:
 forming a second interlayer insulating layer on the at least one first signal line and the first side wall insulating layer, wherein   the forming of the second interlayer insulating layer does not include an additional planarization process.   
     
     
         26 . The manufacturing method of the display device of  claim 25 , further comprising:
 forming a second side wall insulating layer including at least one depression on the second interlayer insulating layer; and   forming a second conductive layer to cover at least one depression on the second interlayer insulating layer and the second side wall insulating layer, wherein   an upper part of the second conductive layer is polished to form at least one second signal line, and   a height measured from the surface of the substrate to a surface of the at least one second signal line along the first direction perpendicular to the surface of the substrate is a same as a height measured from the surface of the substrate to a surface of the second side wall insulating layer along the first direction perpendicular to the surface of the substrate.   
     
     
         27 . The manufacturing method of the display device of  claim 26 , wherein
 the at least one second signal line includes copper (Cu), and   the polishing of the upper part of the second conductive layer is performed by using a slurry for polishing copper including:
 an abrasive; 
 a catalyst including a single molecule with an iron ion; 
 a polishing suppressant; and 
 an oxidizing agent. 
   
     
     
         28 . The manufacturing method of the display device of  claim 26 , wherein a surface of the at least one signal line and a surface of the second side wall insulating layer are each polished by the polishing of the upper part of the second conductive layer.