Modulation device

Abstract

A modulation device including a substrate, a modulation unit, a data line, and a scan line is provided. The modulation unit is disposed on the substrate. The data line is disposed on the substrate and is electrically connected to the modulation unit. The scan line is disposed on the substrate, and has an overlapping area overlapping the data line and a non-overlapping area not overlapping the data line. In a first direction, the scan line has a first width in the overlapping area, and the scan line has a second width in the non-overlapping area. The first width is smaller than the second width. The modulation device of the disclosure reduces a resistance-capacitance loading.

What is claimed is: 
     
         1 . A modulation device, comprising:
 a substrate;   a modulation unit, disposed on the substrate;   a data line, disposed on the substrate and electrically connected to the modulation unit; and   a scan line, disposed on the substrate and having an overlapping area overlapping the data line and a non-overlapping area not overlapping the data line,   wherein in a first direction, the scan line has a first width in the overlapping area, the scan line has a second width in the non-overlapping area, and the first width is smaller than the second width.   
     
     
         2 . The modulation deviceaccording to  claim 1 , further comprising a first electrode and a second electrode, wherein the first electrode and the second electrode are disposed on the substrate, and the modulation unit is disposed on the first electrode and the second electrode. 
     
     
         3 . The modulation deviceaccording to  claim 2 , further comprising a common line, wherein the common line is electrically connected to the second electrode, and the data line is electrically connected to the first electrode. 
     
     
         4 . The modulation deviceaccording to  claim 1 , further comprising a heat dissipation structure disposed below the substrate. 
     
     
         5 . The modulation deviceaccording to  claim 4 , further comprising a conductor layer, wherein the conductor layer is disposed between the heat dissipation structure and the substrate. 
     
     
         6 . The modulation deviceaccording to  claim 1 , wherein the scan line comprises a main electrode line and an auxiliary electrode line, wherein the auxiliary electrode line is electrically connected to the main electrode line through a via penetrating through an insulating layer. 
     
     
         7 . The modulation deviceaccording to  claim 1 , further comprising an insulating layer, wherein the insulating layer is disposed between the data line and the scan line, and a thickness of the insulating layer is 0.2 μm to 10 μm. 
     
     
         8 . A modulation device, comprising:
 a substrate;   a modulation unit, disposed on the substrate;   a data line, disposed on the substrate and electrically connected to the modulation unit; and   a scan line, disposed on the substrate and partially overlapping the data line,   wherein the data line has an overlapping area overlapping the scan line and a non-overlapping area not overlapping the scan line,   wherein in a second direction, the data line has a third width in the overlapping area, the data line has a fourth width in the non-overlapping area, and the third width is smaller than the fourth width.   
     
     
         9 . The modulation device according to  claim 8 , further comprising a first electrode and a second electrode, wherein the first electrode and the second electrode are disposed on the substrate, and the modulation unit is disposed on the first electrode and the second electrode. 
     
     
         10 . The modulation device according to  claim 9 , further comprising a common line, wherein the common line is electrically connected to the second electrode, and the data line is electrically connected to the first electrode. 
     
     
         11 . The modulation device according to  claim 8 , further comprising a heat dissipation structure disposed below the substrate. 
     
     
         12 . The modulation device according to  claim 11 , further comprising a conductor layer, wherein the conductor layer is disposed between the heat dissipation structure and the substrate. 
     
     
         13 . The modulation device according to  claim 8 , wherein the data line comprises a main electrode line and an auxiliary electrode line, wherein the auxiliary electrode line is electrically connected to the main electrode line through a via penetrating through an insulating layer. 
     
     
         14 . The modulation device according to  claim 8 , further comprising an insulating layer, wherein the insulating layer is disposed between the data line and the scan line, and a thickness of the insulating layer is 0.2 μm to 10 μm. 
     
     
         15 . A modulation device, comprising:
 a substrate;   a plurality of modulation units, disposed on the substrate;   a data line, disposed on the substrate and electrically connected to at least one of the modulation units; and   a scan line, disposed on the substrate and disposed in parallel with the data line.   
     
     
         16 . The modulation device according to  claim 15 , further comprising a driving circuit, wherein the driving circuit is disposed on the substrate, and the driving circuit is disposed in a peripheral area of the substrate. 
     
     
         17 . The modulation device according to  claim 15 , further comprising a driving circuit, wherein the driving circuit is disposed on the substrate, and the driving circuit is disposed in a middle area of the substrate. 
     
     
         18 . The modulation device according to  claim 15 , further comprising a plurality of chips, wherein the chips are disposed below the substrate, and the chips drive the modulation units in a partition manner. 
     
     
         19 . The modulation device according to  claim 18 , wherein the chips are formed below the substrate through a panel level package process. 
     
     
         20 . The modulation device according to  claim 18 , wherein the substrate has a plurality of vias, and the chips are electrically connected to the modulation units through the vias.