Solder transfer integrated circuit packaging

Abstract

An approach for transferring solder to a laminate structure in IC (integrated circuit) packaging is disclosed. The approach comprises of a device and method of applying the device. The device comprises of a substrate, a laser ablation layer and solder layer. The device is made by depositing a laser ablation layer onto a glass/silicon substrate and plenty of solder powder/solder pillar is further deposited onto the laser ablation layer. The laminate packaging substrate includes pads with a pad surface finishing layer made from gold. The solder layer of the device is bonded to the laminate packaging substrate. Once bonded, using laser to irradiate the laser ablation layer, the substrate is removed from the laminate.

What is claimed is: 
     
         1 . A structure associated with IC (integrated circuit), the structure comprising:
 a top structure configured to deposit one or more solder materials comprising:
 a substrate of high-density interconnection; 
 a laser ablation layer disposed on the substrate; and 
 the one or more solder materials disposed on the ablation layer; 
   a bottom structure configured to receive the top structure comprising:
 a laminate substrate; 
 one or more pads disposed on the laminate substrate; and 
 one or more pad finishing layers located on the one or more pads. 
   
     
     
         2 . The structure of  claim 1 , further comprising:
 an adhesive layer disposed between the laser ablation layer and the one or more solder materials.   
     
     
         3 . The structure of  claim 1 , wherein:
 the one or more solder materials comprises of one or more pillars of solder; and   the one or more pillars of solder has a cylindrical rode shape with an aspect ratio of height to width in the range of 1:1 to 10:1, depending on the application.   
     
     
         4 . The structure of  claim 1 , wherein:
 the one or more solder materials has a ball shape;   the ball shape is made from powder of solder; and   diameter of each ball shape is less than 10 um.   
     
     
         5 . The structure of  claim 1 , wherein:
 the substrate is made from a glass material and the laser ablation layer comprises of a UV (ultraviolet) absorbing material; and   the laser ablation layer has a thickness in a range of 100 nanometers to less than 300 nanometers.   
     
     
         6 . The structure of  claim 1 , wherein:
 the substrate is made from a silicon material, wherein the laser ablation layer comprises of a mid-wavelength infrared radiation-absorbing material; and   the laser ablation layer includes a thin metallic layers and/or adhesive layers formed with metallic particles, wherein the laser ablation layer has a thickness in a range of 5 nanometers to less than 100 nanometers.   
     
     
         7 . The structure of  claim 1 , wherein the one or more pad surface finishing layers comprises of Au (gold). 
     
     
         8 . The structure of  claim 1 , wherein:
 the one or more pads of the substrate comprises of copper, nickel and palladium and the one or more pads has a pitch of 50 μm or less and there is no pre-solder on the one or more pads; and   the one or more pad finishing layers is made from Au (gold).   
     
     
         9 . The structure of  claim 1 , wherein:
 the one or more solder material is cube shaped;   the cube shape is made from powder of solder; and   height of each cube shape is less than 10 um.