Resin-sealed semiconductor device

Abstract

The resin-sealed semiconductor device is configured in such a way that a second bonding material has a higher melting point than a first bonding material made of a solder-bonding material has, in such a way that one of bonding surfaces in each of which a power module and a cooling device are bonded to each other with the first bonding material is the other surface portion of a copper plate, and the other one of the bonding surfaces is the surface portion, at the power module side, of the cooling device, and in such a way that the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.

What is claimed is: 
     
         1 . A resin-sealed semiconductor device comprising:
 a power module; and   a cooling device that is bonded to the power module with a first bonding material made of a solder-bonding material,   wherein the power module includes
 a semiconductor element, 
 a heat spreader on one surface portion of which the semiconductor element is mounted, 
 a first lead frame that is an input/output terminal bonded to the heat spreader, 
 a second lead frame that is a main terminal bonded to the semiconductor element through the intermediary of a second bonding material, 
 a copper plate whose one surface portion is bonded to the other surface portion, of the heat spreader, that is opposite to the one surface portion thereof, through the intermediary of a resin insulating layer, and 
 a molding resin that seals the semiconductor element, the heat spreader, part of the first lead frame, part of the second lead frame, the resin insulating layer, and a portion of the copper plate, other than the other surface portion opposite to the one surface portion thereof, 
   wherein the second bonding material is made of a bonding material having a higher melting point than the first bonding material has,   wherein one of bonding surfaces in each of which the power module and the cooling device are bonded to each other with the first bonding material is the other surface portion of the copper plate, and the other one of the bonding surfaces is the surface portion, at the power module side, of the cooling device, and   wherein the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.   
     
     
         2 . The resin-sealed semiconductor device according to  claim 1 ,
 wherein the cooling device is formed of copper, and   wherein the surface portion, at the power module side, of the cooling device is formed of copper forming the cooling device.   
     
     
         3 . The resin-sealed semiconductor device according to  claim 1 ,
 wherein the cooling device is formed of aluminum or an alloy containing aluminum, and   wherein the surface portion, at the power module side, of the cooling device is formed of a copper plate layer applied to the surface portion, at the power module side, of the cooling device or a metal plate layer having solder wettability the same as or higher than solder wettability of copper.   
     
     
         4 . The resin-sealed semiconductor device according to  claim 3 , wherein the copper plate layer or the metal plate layer having solder wettability the same as or higher than solder wettability of copper is applied to the surface portion, at the power module side, of the cooling device through the intermediary of a nickel plate layer. 
     
     
         5 . The resin-sealed semiconductor device according to  claim 3 , wherein the copper plate layer or the metal plate layer having solder wettability the same as or higher than solder wettability of copper is formed in such a way that two side portions thereof facing each other are situated within a plane outer shape of the molding resin. 
     
     
         6 . The resin-sealed semiconductor device according to  claim 4 , wherein the copper plate layer or the metal plate layer having solder wettability the same as or higher than solder wettability of copper is formed in such a way that two side portions thereof facing each other are situated within a plane outer shape of the molding resin. 
     
     
         7 . The resin-sealed semiconductor device according to  claim 5 ,
 wherein on the surface portion of the cooling device, there are provided two or more pieces of the power modules that are arranged side by side in a plane manner,   wherein the copper plate layer or the metal plate layer having solder wettability the same as or higher than solder wettability of copper is continuously formed in such a way as to stride over the two or more pieces of the power modules, and   wherein the copper plate layer or the metal plate layer having solder wettability the same as or higher than solder wettability of copper is formed in such away that the other two side portions, which are each perpendicular to the two side portions and face each other, are situated within the plane outer shape of the molding resin of the corresponding power module.   
     
     
         8 . The resin-sealed semiconductor device according to  claim 6 ,
 wherein on the surface portion of the cooling device, there are provided two or more pieces of the power modules that are arranged side by side in a plane manner,   wherein the copper plate layer or the metal plate layer having solder wettability the same as or higher than solder wettability of copper is continuously formed in such a way as to stride over the two or more pieces of the power modules, and   wherein the copper plate layer or the metal plate layer having solder wettability the same as or higher than solder wettability of copper is formed in such away that the other two side portions, which are each perpendicular to the two side portions and face each other, are situated within the plane outer shape of the molding resin of the corresponding power module.   
     
     
         9 . The resin-sealed semiconductor device according to  claim 1 , wherein the second bonding material contains at least bismuth and indium. 
     
     
         10 . The resin-sealed semiconductor device according to  claim 2 , wherein the second bonding material contains at least bismuth and indium. 
     
     
         11 . The resin-sealed semiconductor device according to  claim 3 , wherein the second bonding material contains at least bismuth and indium. 
     
     
         12 . The resin-sealed semiconductor device according to  claim 4 , wherein the second bonding material contains at least bismuth and indium. 
     
     
         13 . The resin-sealed semiconductor device according to  claim 5 , wherein the second bonding material contains at least bismuth and indium. 
     
     
         14 . The resin-sealed semiconductor device according to  claim 6 , wherein the second bonding material contains at least bismuth and indium. 
     
     
         15 . The resin-sealed semiconductor device according to  claim 7 , wherein the second bonding material contains at least bismuth and indium. 
     
     
         16 . The resin-sealed semiconductor device according to  claim 8 , wherein the second bonding material contains at least bismuth and indium.