Process for producing polycrystalline silicon

Abstract

Polycrystalline silicon is produced in a chemical vapour deposition reactor, wherein, outside the reactor at at least one position on at least one reactor component, vibrations of the reactor are measured using a measurement device and optionally recorded. The vibrations may be used to identify rod fall over and other events occurring within the reactor.

What is claimed is: 
     
         1 . Polycrystalline silicon is produced in a chemical vapour deposition reactor, wherein, outside the reactor at at least one position on at least one reactor component, vibrations of the reactor are measured using a measurement device and optionally recorded. The vibrations may be used to identify rod fall over and other events occurring within the reactor. A reactor for the deposition of polycrystalline silicon, comprising, as reactor components, a base plate, a reactor shell arranged on the base plate, at least one conduit for gas supply, at least one conduit for gas removal, and electrode holders for at least one heatable support body, and at least one measurement device for determining vibrations of the reactor, the measurement device mounted on one or more of the reactor components. 
     
     
         2 . The reactor of  claim 1 , wherein the measurement device comprises an acceleration sensor and/or a microphone. 
     
     
         3 . The reactor of  claim 1 , wherein the measurement device further comprises a recording system. 
     
     
         4 . The reactor of  claim 1 , wherein the measurement device is coupled to a process control station for controlling the reactor.