Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd systems and methods of forming single crystal piezoelectric layers using the same

Abstract

An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70° C. and 200° C.

What is claimed is: 
     
         1 . An apparatus for forming semiconductor films, the apparatus comprising:
 a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber;   a central injector column that penetrates through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow a low vapor pressure metalorganic precursor vapor into the reactor chamber in the closed position;   an actively heated metalorganic precursor line coupled to the central injector column;   a heated metalorganic precursor source vessel coupled to the central injector column by the actively heated metalorganic precursor line;   a pressure controller between the heated metalorganic precursor source vessel and a carrier gas source;   a mass flow controller in-line with the actively heated metalorganic precursor line between the heated metalorganic precursor source vessel and the central injector column.   
     
     
         2 . The apparatus of  claim 1  wherein the actively heated metalorganic precursor line is thermally isolated from lines carrying a hydride and/or non-low vapor pressure metalorganic precursors to the central injector column. 
     
     
         3 . The apparatus of  claim 1  wherein the actively heated metalorganic precursor line is configured to heat the low vapor pressure metalorganic precursor vapor to a temperature range between about 100° C. and 200° C. 
     
     
         4 . The apparatus of  claim 1  wherein the actively heated metalorganic precursor line is configured to heat the low vapor pressure metalorganic precursor vapor to a temperature range between about 120° C. and 150° C. 
     
     
         5 . The apparatus of  claim 1  wherein the actively heated metalorganic precursor line is a coupled to an inlet in the central injector column without passing through the lower portion of the horizontal flow reactor. 
     
     
         6 . The apparatus of  claim 1  wherein the actively heated metalorganic precursor line is remains a unitary structure when the horizontal flow reactor is in the open position. 
     
     
         7 . The apparatus of  claim 1  wherein the actively heated metalorganic precursor line remains a unitary structure from a run/vent valve to an inlet in the central injector column when the horizontal flow reactor is in the open position. 
     
     
         8 . The apparatus of  claim 1  wherein the actively heated metalorganic precursor line includes at least one bellows expansion joint. 
     
     
         9 . A method of forming a piezoelectric film, the method comprising:
 heating a horizontal flow reactor chamber, the horizontal flow reactor chamber including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position; and   heating a low vapor pressure metalorganic precursor vapor conducted in a heated metalorganic precursor line to a temperature range between about 70° C. and 200° C., the heated metalorganic precursor line coupled to a central injector column that penetrates through the upper portion of the horizontal flow reactor chamber, to allow the low vapor pressure metalorganic precursor vapor into horizontal flow reactor chamber in the closed position.   
     
     
         10 . The method of  claim 9  further comprising:
 actuating wafers held in a planetary wafer transport coupled to the lower portion of the horizontal flow reactor chamber; and 
 conducting the low vapor pressure metalorganic precursor vapor through a susceptor into horizontal flow reactor chamber to generate a horizontal laminar flow of the low vapor pressure metalorganic precursor vapor over the wafers. 
 
     
     
         11 . The method of  claim 10  further comprising:
 heating a metalorganic precursor source vessel to generate the low vapor pressure metalorganic precursor vapor in the heated metalorganic precursor line to the temperature range. 
 
     
     
         12 . The method of  claim 11  further comprising:
 controlling an amount of a carrier gas that flows to the metalorganic precursor source vessel from a carrier gas source using a mass flow controller; and 
 regulating a pressure in the heated metalorganic precursor line between the metalorganic precursor source vessel and the central injector column using a temperature pressure controller in-line with the heated metalorganic precursor line. 
 
     
     
         13 . The method of  claim 11  further comprising:
 regulating a pressure of a carrier gas that flows to the metalorganic precursor source vessel from a carrier gas source using a pressure controller; and 
 controlling an amount of the low vapor pressure metalorganic precursor vapor in the heated metalorganic precursor line between the metalorganic precursor source vessel and the central injector column using a temperature mass flow controller in-line with the heated metalorganic precursor line.