Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

1 - 21 . (canceled) 
     
     
         22 . A semiconductor device, comprising:
 a semiconductor element;   a wiring layer portion to which the semiconductor element is mounted by flip chip bonding;   a first conductive portion which is located lower than the wiring layer portion and is located opposite to the semiconductor element with respect to the wiring layer portion; and   a second conductive portion which is located over the first conductive portion and is electrically connected to both of the first conductive portion and the wiring layer portion,   wherein the first conductive portion includes a projecting portion protruding in a thickness direction of the semiconductor device.   
     
     
         23 . The semiconductor device according to  claim 22 , wherein the semiconductor element includes a projection conductive electrode. 
     
     
         24 . The semiconductor device according to  claim 23 , wherein the projection conductive electrode contains copper. 
     
     
         25 . The semiconductor device according to  claim 24 , wherein the first conductive portion includes a surface thin metal covering layer. 
     
     
         26 . The semiconductor device according to  claim 25 , wherein the surface thin metal covering layer includes a portion formed on the second conductive portion. 
     
     
         27 . The semiconductor device according to  claim 26 , further comprising a sealing resin covering the semiconductor element, the wiring layer portion, the first conductive portion, and the second conductive portion. 
     
     
         28 . The semiconductor device according to  claim 27 , wherein one edge of the sealing resin and one edge of the second conductive portion are flush with each other. 
     
     
         29 . The semiconductor device of  claim 22 , wherein each of the first conductive portion and the second conductive portion contains copper. 
     
     
         30 . A semiconductor device, comprising:
 a semiconductor element;   a wiring layer including a first wiring portion to which the semiconductor element is mounted, a second wiring portion located lower than the first wiring portion and located opposite to the semiconductor element with respect to the first wiring portion, and a third wiring portion located over the second wiring portion and is electrically connected to the second wiring portion and the first wiring portion; and   a sealing resin covering the first wiring portion, the second wiring portion, and the third wiring portion,   wherein the sealing resin includes an intruding portion that intrudes into a space formed by respective inner surfaces of the first wiring portion, the second wiring portion and the third wiring portion, so that the inner surface of the first wiring portion and a part of the inner surface of the third wiring portion face each other via the intruding portion.   
     
     
         31 . The semiconductor device according to  claim 30 , wherein the second wiring portion includes a projecting portion protruding in a thickness direction of the semiconductor device. 
     
     
         32 . The semiconductor device according to  claim 31 , wherein the semiconductor element includes a projection conductive electrode. 
     
     
         33 . The semiconductor device according to  claim 32 , wherein the projection conductive electrode contains copper. 
     
     
         34 . The semiconductor device according to  claim 33 , wherein the second wiring portion includes a surface thin metal covering layer. 
     
     
         35 . The semiconductor device according to  claim 34 , wherein the surface thin metal covering layer includes a portion formed on the third wiring portion. 
     
     
         36 . The semiconductor device according to  claim 35 , wherein one edge of the sealing resin and one edge of the third wiring portion are flush with each other. 
     
     
         37 . The semiconductor device according to  claim 36 , wherein each of the second wiring portion and the third wiring portion contains copper.