Semiconductor light emitting device

Abstract

A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.

1 . A semiconductor light emitting device comprising, in layers disposed in an order as follows:
 a semiconductor substrate;   a first metal layer on the semiconductor substrate;   a second metal layer on the first metal layer, the second metal layer containing Au;   an insulating layer on the second metal layer;   an epitaxial growth layer on the insulating layer, the epitaxial growth layer containing Ga, the epitaxial growth layer having an uneven surface; and   a first electrode layer on the epitaxial growth layer.   
     
     
         2 . The semiconductor light emitting device according to  claim 1 , wherein a height of the uneven surface is lower than a height of the first electrode layer. 
     
     
         3 . The semiconductor light emitting device according to  claim 1 , wherein the uneven surface is a frosting processing region. 
     
     
         4 . The semiconductor light emitting device according to  claim 1 , wherein
 the second metal layer comprises a first bonding layer and a second bonding layer, and   a semiconductor substrate side of the semiconductor light emitting device and an epitaxial growth layer side of the semiconductor light emitting device are bonded to each other by bonding the first bonding layer and the second bonding layer.   
     
     
         5 . The semiconductor light emitting device according to  claim 1 , wherein the semiconductor substrate is a silicon substrate. 
     
     
         6 . A semiconductor light emitting device comprising, in layers disposed in an order as follows:
 a semiconductor substrate comprising a first surface;   a first metal layer on the semiconductor substrate;   a second metal layer on the first metal layer, the second metal layer containing Au;   an epitaxial growth layer on the second metal layer, the epitaxial growth layer containing Ga;   a semiconductor layer on the epitaxial growth layer, the semiconductor layer containing Ga;   a first region formed on a surface of the epitaxial growth layer, the first region having an uneven surface; and   a first electrode layer on the semiconductor layer, wherein   the first region is formed so as to surround the first electrode layer when viewed in a first direction vertical to the first surface.   
     
     
         7 . The semiconductor light emitting device according to  claim 6 , wherein a height of the uneven surface is lower than a height of the first electrode layer. 
     
     
         8 . The semiconductor light emitting device according to  claim 6 , wherein the uneven surface is a frosting processing region. 
     
     
         9 . The semiconductor light emitting device according to  claim 6 , wherein
 the second metal layer comprises a first bonding layer and a second bonding layer, and   a semiconductor substrate side of the semiconductor light emitting device and an epitaxial growth layer side of semiconductor light emitting device are bonded to each other by bonding the first bonding layer and the second bonding layer.   
     
     
         10 . The semiconductor light emitting device according to  claim 6 , wherein the semiconductor substrate is a silicon substrate.