Light emitting element and method of fabricating light emitting element

Abstract

Provided herein is a light emitting element and a method of fabricating the light emitting element. The light emitting element includes a first semiconductor layer, a first insulating film disposed on the first semiconductor layer, the first insulating film including a nano-pattern, an active layer disposed in the nano-pattern of the first insulating film, and a second semiconductor layer disposed on the active layer in the nano-pattern of the first insulating film.

What is claimed is: 
     
         1 . A light emitting element comprising:
 a first semiconductor layer;   a first insulating film disposed on the first semiconductor layer, the first insulating film including a nano-pattern;   an active layer disposed in the nano-pattern of the first insulating film; and   a second semiconductor layer disposed on the active layer in the nano-pattern of the first insulating film.   
     
     
         2 . The light emitting element according to  claim 1 , wherein a diameter of the nano-pattern of the first insulating film is less than a diameter of the first semiconductor layer. 
     
     
         3 . The light emitting element according to  claim 1 , wherein the nano-pattern of the first insulating film exposes the first semiconductor layer. 
     
     
         4 . The light emitting element according to  claim 1 , wherein the first insulating film covers the active layer and the second semiconductor layer. 
     
     
         5 . The light emitting element according to  claim 1 , wherein the active layer is disposed between the first semiconductor layer and the second semiconductor layer. 
     
     
         6 . The light emitting element according to  claim 1 , further comprising:
 a second insulating film disposed on the first insulating film.   
     
     
         7 . The light emitting element according to  claim 6 , wherein the second insulating film covers the first semiconductor layer that is exposed from the first insulating film. 
     
     
         8 . The light emitting element according to  claim 1 , wherein the active layer emits red light. 
     
     
         9 . The light emitting element according to  claim 1 , further comprising:
 an electrode layer disposed on the second semiconductor layer.   
     
     
         10 . The light emitting element according to  claim 1 , further comprising:
 a superlattice layer disposed in the nano-pattern of the first insulating film.   
     
     
         11 . A method of fabricating a light emitting element, comprising:
 forming a first semiconductor layer on a stack substrate;   forming a first insulating film on the first semiconductor layer;   forming nano-patterns by etching the first insulating film;   forming an active layer and a second semiconductor layer in the nano-patterns of the first insulating film; and   partially etching the first insulating film and the first semiconductor layer, and forming light emitting patterns.   
     
     
         12 . The method according to  claim 11 , wherein, in the partially etching of the first insulating film and the first semiconductor layer, the active layer and the second semiconductor layer are protected by the first insulating film. 
     
     
         13 . The method according to  claim 11 , wherein the nano-patterns of the first insulating film pass through the first insulating film and expose a top surface of the first semiconductor layer. 
     
     
         14 . The method according to  claim 11 , further comprising:
 forming an electrode layer on the second semiconductor layer.   
     
     
         15 . The method according to  claim 14 , further comprising:
 forming a mask on the electrode layer.   
     
     
         16 . The method according to  claim 15 , wherein the mask overlaps the nano-patterns of the first insulating film in a plan view. 
     
     
         17 . The method according to  claim 16 , wherein the forming of the light emitting patterns comprises etching the electrode layer, the first insulating film, and the first semiconductor layer that are exposed from the mask. 
     
     
         18 . The method according to  claim 11 , further comprising:
 forming a second insulating film on the light emitting patterns.   
     
     
         19 . The method according to  claim 18 , wherein the second insulating film covers the first insulating film and the first semiconductor layer. 
     
     
         20 . The method according to  claim 11 , further comprising:
 separating the light emitting patterns from the stack substrate.