Semiconductor device and electronic apparatus

Abstract

Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

1 . A semiconductor device comprising:
 a multilayer substrate including an optical element;   a light-transmitting plate provided on the substrate to cover the optical element; and   a lens of an inorganic material provided between the substrate and the light-transmitting plate,   wherein a structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.   
     
     
         2 . The semiconductor device according to  claim 1 , further comprising:
 a first organic material layer provided below the lens; and   a second organic material layer provided above the lens.   
     
     
         3 . The semiconductor device according to  claim 1 ,
 wherein the structure has a same shape as the lens and is formed of the inorganic material.   
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein the structure is a flat film that is formed of a same material as the lens and has a same volume per unit area as the lens.   
     
     
         5 . The semiconductor device according to  claim 1 ,
 wherein the structure is a flat film that is designed to have a same strength per unit area as the lens.   
     
     
         6 . The semiconductor device according to  claim 1 , further comprising:
 a film having one end provided as an extension of the lens and the other end connected to a predetermined layer of the substrate.   
     
     
         7 . The semiconductor device according to  claim 6 ,
 wherein the film is continuously provided to surround the effective photosensitive region.   
     
     
         8 . The semiconductor device according to  claim 6 ,
 wherein the film is discontinuously provided to surround the effective photosensitive region.   
     
     
         9 . The semiconductor device according to  claim 1 ,
 wherein the inorganic material is silicon nitride.   
     
     
         10 . The semiconductor device according to  claim 1 ,
 wherein the semiconductor device is a back-illuminated image sensor.   
     
     
         11 . The semiconductor device according to  claim 1 ,
 wherein the semiconductor device is a front-illuminated image sensor.   
     
     
         12 . A semiconductor device comprising:
 a multilayer substrate including an optical element;   a light-transmitting plate provided on the substrate to cover the optical element; and   a lens of an inorganic material provided between the substrate and the light-transmitting plate,   wherein a portion of the lens is connected to a predetermined layer of the substrate by a film formed of a same material as the lens.   
     
     
         13 . An electronic apparatus comprising:
 a semiconductor device including:
 a multilayer substrate including an optical element, 
 a light-transmitting plate provided on the substrate to cover the optical element, and 
 a lens of an inorganic material provided between the substrate and the light-transmitting plate, 
 wherein a structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan; and 
   a signal processing unit that performs a signal process on a pixel signal output from the semiconductor device.