Imaging element and imaging device
Abstract
An imaging element according to the present disclosure includes: a first pixel and a second pixel each including a light receiving section and a light condensing section, in which the light receiving section includes a photoelectric conversion element, and the light condensing section is configured to allow entering light to be condensed toward the light receiving section; a trench provided between the first pixel and the second pixel; a first light shielding film embedded in the trench; and a second light shielding film provided on part of a light receiving surface of the light receiving section of the second pixel, in which the second light shielding film is continuous with the first light shielding film.
Claims
exact text as granted — not AI-modified1 - 13 . (canceled)
14 . An imaging element, comprising:
a first pixel and a second pixel, wherein each pixel includes a light receiving section and a light condensing section, the light receiving section of each pixel including a photoelectric conversion element disposed in a semiconductor substrate, and the light condensing section of each pixel configured to allow entering light to be condensed toward the light receiving section; a first light shielding film disposed in the semiconductor substrate and disposed between the first pixel and the second pixel; and a second light shielding film disposed in the semiconductor substrate and disposed between the light condensing section of the second pixel and a surface of the light receiving section of the second pixel, wherein, in a cross-sectional view, the first light shielding film has a first width and the second light shielding film has a second width in a direction perpendicular to a depth direction of the semiconductor substrate, the first width being smaller than the second width.
15 . The imaging element according to claim 14 , wherein the second light shielding film is provided on the surface of the light receiving section of each pixel.
16 . The imaging element according to claim 14 , wherein the second light shielding film is embedded in the light receiving section of each pixel.
17 . The imaging element according to claim 14 , wherein the first pixel and the second pixel allow respective entering light to be condensed at a same level in a depthwise direction.
18 . The imaging element according to claim 14 , wherein the light receiving section of each pixel includes an n-type semiconductor region and a p-type semiconductor region, the n-type semiconductor region serving as the photoelectric conversion element of a respective pixel, and the p-type semiconductor region provided on the surface and extending from a wall surface to a bottom surface of the first light shielding film.
19 . The imaging element according to claim 18 , wherein the surface of the light receiving section and the wall surface and the bottom surface of the first light shielding film are covered with a continuous fixed charge film.
20 . The imaging element according to claim 14 further comprising a first region and a second region, the first region including the first pixel and the second pixel, and the second region provided around the first region and shielded from light by a third light shielding film, wherein the third light shielding film is configured of a same material as a material of the second light shielding film.
21 . The imaging element according to claim 14 , wherein the light condensing section of each pixel includes a lens that serves as an optical function layer, and the lens of the first pixel and the lens of the second pixel are of a same shape.
22 . The imaging element according to claim 21 , wherein the light receiving section of the first pixel faces the lens of the first pixel and the light receiving section of the second pixel faces the lens of the second pixel.
23 . The imaging element according to claim 21 , wherein each pixel further includes an inner lens provided between the lens and the light receiving section.
24 . The imaging element according to claim 14 , wherein the light condensing section of the first pixel includes a color filter in red, green, blue, or white, and the light condensing section of the second pixel includes a color filter in green or white.
25 . The imaging element according to claim 14 , wherein the first pixel and the second pixel serve as imaging plane phase difference detection pixels, and wherein the first pixel and the second pixel are disposed adjacent to each other.
26 . The imaging element according to claim 14 , wherein the second light shielding film is continuous with the first light shielding film.
27 . The imaging element according to claim 14 , wherein the second pixel serves as an imaging plane phase difference detection pixel.
28 . An imaging device provided with an imaging element, the imaging element comprising:
a first pixel and a second pixel, wherein each pixel includes a light receiving section and a light condensing section, the light receiving section of each pixel including a photoelectric conversion element disposed in a semiconductor substrate, and the light condensing section of each pixel configured to allow entering light to be condensed toward the light receiving section; a first light shielding film disposed in the semiconductor substrate and disposed between the first pixel and the second pixel; and a second light shielding film disposed in the semiconductor substrate and disposed between the light condensing section of the second pixel and a surface of the light receiving section of the second pixel, wherein, in a cross-sectional view, the first light shielding film has a first width and the second light shielding film has a second width in a direction perpendicular to a depth direction of the semiconductor substrate, the first width being smaller than the second width.Join the waitlist — get patent alerts
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