Integrated circuit including efuse cell

Abstract

An integrated circuit includes a transistor, a first fuse element and a second fuse element. The transistor is formed in a first conductive layer. The first fuse element is formed in a second conductive layer and coupled between the transistor and a first data line. The second fuse element is formed in the second conductive layer and coupled between the transistor and a second data line. The first fuse element and the second fuse element are disposed at a same side of the transistor.

What is claimed is: 
     
         1 . An integrated circuit, comprising:
 a transistor formed in a first conductive layer;   a first fuse element formed in a second conductive layer and coupled between the transistor and a first data line; and   a second fuse element formed in the second conductive layer and coupled between the transistor and a second data line,   wherein the first fuse element and the second fuse element are disposed at a same side of the transistor.   
     
     
         2 . The integrated circuit of  claim 1 , wherein the second conductive layer is disposed above the first conductive layer, and the first fuse element and the second fuse element are disposed above the first conductive layer. 
     
     
         3 . The integrated circuit of  claim 1 , further comprising:
 a conductive segment formed in a third conductive layer disposed between the first conductive layer and the second conductive layer,   wherein the conductive segment, part of the first fuse element and part of the transistor are overlapped in a layout view, and the first fuse element is coupled through the conductive segment to the transistor.   
     
     
         4 . The integrated circuit of  claim 1 , wherein the first fuse element comprises:
 a fuse line; and   a pair of fuse segments disposed on opposite sides of the fuse line,   wherein one of the pair of fuse segments is coupled through a fuse conductive segment formed in the second conductive layer to the second fuse element.   
     
     
         5 . The integrated circuit of  claim 1 , wherein the first fuse element comprises:
 a first fuse line; and   a pair of first fuse segments disposed on opposite sides of an end of the first fuse line,   wherein the second fuse element comprises:
 a second fuse line; and 
 a pair of second fuse segments disposed on opposite sides of an end of the second fuse line, 
 wherein one of the pair of first fuse segments is coupled through a fuse conductive segment formed in the second conductive layer to one of the pair of second fuse segments. 
   
     
     
         6 . The integrated circuit of  claim 5 , wherein
 one of the pair of first fuse segments, which is coupled to one of the pair of second fuse segments, is further coupled to the transistor through a conductive segment formed in a third conductive layer disposed between the first conductive layer and the second conductive layer.   
     
     
         7 . An integrated circuit, comprising:
 a plurality of electrical fuse cells comprising:
 a first conductive segment; 
 a first transistor formed in a first conductive layer; and 
 a pair of first fuse elements formed in a second conductive layer disposed above the first conductive layer and coupled to a pair of data lines, 
 wherein the pair of first fuse elements are coupled together and are coupled through the first conductive segment to the first transistor, 
 wherein the first conductive segment and the pair of first fuse elements are disposed at a same side of the first transistor. 
   
     
     
         8 . The integrated circuit of  claim 7 , wherein the plurality of electrical fuse cells further comprise:
 a second transistor formed in the first conductive layer and disposed next to the first transistor;   a first program line formed in a third conductive layer disposed between the first conductive layer and the second conductive layer, wherein the first transistor is coupled to the first program line; and   a second program line formed in the third conductive layer and disposed next to the first program line, wherein the second transistor is coupled to the second program line,   wherein both of the first program line and the second program line are disposed above or below all of the first transistor, the second transistor and the pair of first fuse elements in a layout view.   
     
     
         9 . The integrated circuit of  claim 7 , further comprising:
 a third conductive layer disposed between the first conductive layer and the second conductive layer,   wherein the first conductive segment is formed in the third conductive layer and is partially overlapped with first transistor and one of the pair of first fuse elements in a layout view.   
     
     
         10 . The integrated circuit of  claim 7 , wherein one of the pair of first fuse elements comprises:
 a fuse line;   a first pair of fuse segments disposed on opposite sides of a first end of the fuse line; and   a second pair of fuse segments disposed on opposite sides of a second end of the fuse line, wherein the first end and the second end are opposite from each other,   wherein one of the first pair of fuse segments is overlapped with the first conductive segment in a layout view, and   the second pair of fuse segments and part of the fuse line are overlapped.   
     
     
         11 . The integrated circuit of  claim 7 , wherein one of the pair of first fuse elements comprises:
 a first fuse line; and   a pair of first fuse segments disposed on opposite sides of an end of the first fuse line,   wherein the other one of the pair of first fuse elements comprises:
 a second fuse line; and 
 a pair of second fuse segments disposed on opposite sides of an end of the second fuse line, 
 wherein one of the pair of first fuse segments is coupled through a fuse conductive segment formed in the second conductive layer to one of the pair of second fuse segments, and is overlapped with the first conductive segment in a layout view. 
   
     
     
         12 . The integrated circuit of  claim 7 , further comprising:
 a first program line formed in a third conductive layer disposed between the first conductive layer and the second conductive layer, wherein the first transistor is coupled to the first program line; and   a second program line formed in the third conductive layer and disposed next to the first program line, wherein both of the first program line and the second program line are disposed above or below the plurality of electrical fuse cells in a layout view,   wherein the plurality of electrical fuse cells further comprise:
 a second transistor formed in the first conductive layer and disposed next to the first transistor, wherein the second transistor is coupled to the second program line; and 
 a pair of second fuse elements formed in the second conductive layer and coupled together by a fuse conductive segment, wherein the pair of first fuse elements are disposed between the pair of second fuse elements and the second transistor in a layout view, 
 wherein the second transistor is coupled through one of the pair of second fuse elements to a first data line of the pair of data lines for receiving a first data signal, and the second transistor is coupled through the other one of the pair of second fuse elements to a second data line of the pair of data lines for receiving a second data signal. 
   
     
     
         13 . The integrated circuit of  claim 12 , wherein the plurality of electrical fuse cells further comprise:
 a second conductive segment disposed next to the first conductive segment,   wherein the pair of second fuse elements are coupled through the second conductive segment to the second transistor,   the first conductive segment and the second conductive segment are formed in a fourth conductive layer disposed between the second conductive layer and the third conductive layer, and   the second conductive segment and the first conductive segment have different length.   
     
     
         14 . The integrated circuit of  claim 12 , further comprising:
 a third program line formed in the third conductive layer and disposed apart from both of the first program line and the second program line; and   a fourth program line formed in the third conductive layer and disposed next to the third program line, wherein both of the third program line and the fourth program line are disposed above or below the plurality of electrical fuse cells in a layout view,   wherein the plurality of electrical fuse cells further comprise:
 a third transistor formed in the first conductive layer, wherein the third transistor is coupled to the third program line; 
 a fourth transistor formed in the first conductive layer and disposed next to the third transistor, wherein the fourth transistor is coupled to the fourth program line; 
 a pair of third fuse elements formed in the second conductive layer and coupled together, wherein the pair of second fuse elements are disposed between the pair of first fuse elements and the pair of third fuse elements; and 
 a pair of fourth fuse elements formed in the second conductive layer and coupled together, wherein the pair of third fuse elements are disposed between the pair of second fuse elements and the pair of fourth fuse elements, 
 wherein the third transistor is coupled through one of the pair of third fuse elements to the first data line for receiving the first data signal, and the second transistor is coupled through the other one of the pair of second fuse elements to the second data line for receiving the second data signal. 
   
     
     
         15 . An integrated circuit, comprising:
 a first transistor coupled to a first data line;   a second transistor coupled to a second data line;   a first fuse element coupled to the first transistor and disposed at a first side of the first transistor;   a second fuse element coupled to the first transistor and disposed at the first side of the second transistor;   a third fuse element coupled to the second transistor and disposed at the first side of the first fuse element; and   a fourth fuse element coupled to the second transistor and disposed at the first side of the second fuse element.   
     
     
         16 . The integrated circuit of  claim 15 , wherein the first fuse element is between the first transistor and the third fuse element. 
     
     
         17 . The integrated circuit of  claim 15 , wherein the second fuse element is between the second transistor and the fourth fuse element. 
     
     
         18 . The integrated circuit of  claim 15 , wherein the first fuse element is disposed at a second side of the third fuse element. 
     
     
         19 . The integrated circuit of  claim 15 , wherein the second fuse element is disposed at a second side of the fourth fuse element. 
     
     
         20 . The integrated circuit of  claim 15 , wherein the second transistor is arranged next to the first transistor in a layout view.