US2023143537A1PendingUtilityA1

Semiconductor processing tool and method of operation

Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Nov 11, 2021Filed: Jan 10, 2022Published: May 11, 2023
Est. expiryNov 11, 2041(~15.3 yrs left)· nominal 20-yr term from priority
H10P 72/7618H10P 72/53H10P 72/0602H10P 72/0606C23C 16/52C23C 16/4583C23C 16/0209H01L 21/681H01L 21/68764
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Claims

Abstract

In some implementations, a control device may determine a spacing measurement in a first dimension between a wafer on a susceptor and a pre-heat ring of a semiconductor processing tool and/or a gapping measurement in a second dimension between the wafer and the pre-heat ring, using one or more images captured in situ during a process by at least one optical sensor. Accordingly, the control device may generate a command based on a setting associated with the process being performed by the semiconductor processing tool and the spacing measurement and/or the gapping measurement. The control device may provide the command to at least one motor to move the susceptor.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A device, comprising:
 at least one motor configured to move a susceptor of a semiconductor processing tool, wherein the at least one motor is configured to move the susceptor vertically, laterally, or a combination thereof in situ during a process according to a command; and   a controller configured to receive input during the process associated with a spacing measurement in a first dimension between a wafer on the susceptor and a pre-heat ring, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, and configured to provide the command to the at least one motor based on the input.   
     
     
         2 . The device of  claim 1 , wherein the input comprises at least one image, from at least one optical sensor, associated with the susceptor and the pre-heat ring, and the controller uses the at least one image to determine the spacing measurement and the gapping measurement. 
     
     
         3 . The device of  claim 1 , wherein the input includes at least one first image, from at least one first optical sensor, associated with the spacing measurement between the susceptor and the pre-heat ring, and at least one second image, from at least one second optical sensor, associated with the gapping measurement between the susceptor and the pre-heat ring. 
     
     
         4 . The device of  claim 1 , wherein the at least one motor comprises a rotational motor associated with rotation of the susceptor. 
     
     
         5 . The device of  claim 1 , wherein the controller is configured to determine a plurality of measurements, based on the input and associated with different points around the susceptor, to determine the spacing measurement, the gapping measurement, or the combination thereof. 
     
     
         6 . The device of  claim 1 , wherein the controller is configured to determine a plurality of measurements, based on the input and associated with a same point of the susceptor, to determine the spacing measurement, the gapping measurement, or the combination thereof. 
     
     
         7 . A method, comprising:
 determining at least one of a spacing measurement in a first dimension between a wafer on a susceptor and a pre-heat ring of a semiconductor processing tool, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, using one or more images captured in situ during a process by at least one optical sensor;   generating a command based on a setting associated with the process being performed by the semiconductor processing tool and the spacing measurement, the gapping measurement, or the combination thereof; and   providing the command to at least one motor to move the susceptor.   
     
     
         8 . The method of  claim 7 , further comprising:
 determining at least one of an updated spacing measurement between the wafer and the pre-heat ring, an updated gapping measurement between the wafer and the pre-heat ring, or a combination thereof, using one or more additional images captured during the process by the at least one optical sensor;   generating an additional command based on the setting and the updated spacing measurement, the updated gapping measurement, or the combination thereof; and   providing the additional command to the at least one motor to move the susceptor.   
     
     
         9 . The method of  claim 7 , further comprising:
 providing a command to a susceptor blade to load the wafer on the susceptor,   wherein the spacing measurement, the gapping measurement, or the combination thereof is determined after the wafer is loaded.   
     
     
         10 . The method of  claim 9 , further comprising:
 providing an additional command to the susceptor blade to unload the wafer from the susceptor after the process, performed on the wafer, is complete.   
     
     
         11 . The method of  claim 10 , further comprising:
 providing a command to the susceptor blade to load an additional wafer on the susceptor;   determining at least one of an updated spacing measurement between the additional wafer and the pre-heat ring, an updated gapping measurement between the additional wafer and the pre-heat ring, or a combination thereof, using one or more additional images captured by the at least one optical sensor, wherein the updated spacing measurement, the updated gapping measurement, or the combination thereof is determined after the additional wafer is loaded;   generating an additional command based on the setting and the updated spacing measurement, the updated gapping measurement, or the combination thereof; and   providing the additional command to the at least one motor to move the susceptor.   
     
     
         12 . The method of  claim 11 , further comprising:
 providing an additional command to the susceptor blade to unload the additional wafer from the susceptor after the process, performed on the additional wafer, is complete.   
     
     
         13 . The method of  claim 7 , further comprising:
 providing a command to the semiconductor processing tool to perform the process on the wafer loaded on the susceptor;   determining at least one of an updated spacing measurement between the wafer and the pre-heat ring, an updated gapping measurement between the wafer and the pre-heat ring, or a combination thereof, using one or more additional images captured during the process by the at least one optical sensor;   generating an additional command based on a setting associated with an additional process being performed by the semiconductor processing tool and the updated spacing measurement, the updated gapping measurement, or the combination thereof;   providing the additional command to the at least one motor to move the susceptor during the additional process.   
     
     
         14 . The method of  claim 7 , further comprising:
 providing a command to a rotational motor to rotate the susceptor during the process.   
     
     
         15 . A method, comprising:
 loading a wafer having a plurality of recessed fins onto a susceptor;   depositing doped material on the recessed fins using a semiconductor processing tool including the susceptor, wherein at least one of a spacing measurement in a first dimension between the wafer and a pre-heat ring of the semiconductor processing tool, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, is adjusted in situ during the deposition by at least one motor configured to move the susceptor;   causing a first epitaxial growth on the doped material using the semiconductor processing tool, wherein at least one of an updated spacing measurement, an updated gapping measurement, or a combination thereof, is adjusted in situ during the first epitaxial growth by the at least one motor; and   causing a second epitaxial growth on the doped material using the semiconductor processing tool, wherein at least one of a further updated spacing measurement, a further updated gapping measurement, or a combination thereof, is adjusted in situ during the second epitaxial growth by the at least one motor.   
     
     
         16 . The method of  claim 15 , wherein the second epitaxial growth causes formation of merged source/drain regions across at least two of the recessed fins. 
     
     
         17 . The method of  claim 15 , further comprising:
 rotating the susceptor during the deposition, the first epitaxial growth, and the second epitaxial growth.   
     
     
         18 . The method of  claim 17 , wherein a rotation speed associated with one of the deposition, the first epitaxial growth, or the second epitaxial growth is different from a rotation speed associated with another of the deposition, the first epitaxial growth, or the second epitaxial growth. 
     
     
         19 . The method of  claim 15 , wherein the at least one motor performs adjustments in situ based on input from at least one optical sensor. 
     
     
         20 . The method of  claim 15 , further comprising:
 unloading the wafer from the susceptor after the second epitaxial growth.

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