Negative tone photoresist for euv lithography

Abstract

A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight per cent of a total weight of the negative tone photoresist.

What is claimed is: 
     
         1 . A method of manufacturing semiconductor device, comprising:
 forming a photoresist on a semiconductor substrate, wherein the photoresist is prepared from materials consisting of:
 a photo acid generator (PAG) as a base resin and comprising an acid labile group (ALG), wherein the PAG comprises 40 weight percent (wt %) to 60 wt % of a total solid weight of the negative tone photoresist; 
 an organic solvent; and 
 a dissolution inhibitor; 
   exposing the photoresist;   developing the photoresist to form a pattern in the photoresist;   transferring the pattern in the photoresist to the semiconductor substrate using etching; and   stripping off the photoresist.   
     
     
         2 . The method of  claim 1 , wherein when the PAG is exposed to a radiation, the ALG is cleaved from a backbone of the PAG. 
     
     
         3 . The method of  claim 2 , wherein the radiation is extreme ultraviolet radiation. 
     
     
         4 . The method of  claim 1 , wherein the photo acid generator is poly hydroxystyrene (PHS), poly benzoic acid (PBA) or poly acrylic acid (PAA). 
     
     
         5 . The method of  claim 1 , wherein the dissolution inhibitor is a cross-linker. 
     
     
         6 . The method of  claim 1 , wherein the photoresist is prepared from materials further consisting of 2-methoxy-1-methylethyl acetate (PGMEA), butyl acetate or ethyl lactate. 
     
     
         7 . The method of  claim 1 , wherein the photoresist is prepared from materials further consisting of polyethylene glycol (PEG). 
     
     
         8 . The method of  claim 1 , wherein the tone photoresist is prepared from materials further consisting of a quencher. 
     
     
         9 . A negative tone photoresist prepared from materials consisting of:
 a photoresist polymer as a base resin and configured to provide a cross linker site upon an exposure;   a cross-linkable compound, wherein the cross-linkable compound comprises greater than 5 weight percent (wt %) of a total solid weight of the negative tone photoresist; and   an organic solvent.   
     
     
         10 . The negative tone photoresist of  claim 9 , wherein the cross-linkable compound comprises 5 weight percent (wt %) to 10 weight percent (wt %) of the total solid weight of the negative tone photoresist. 
     
     
         11 . The negative tone photoresist of  claim 9 , wherein the cross-linkable compound comprises two cross-linking sites. 
     
     
         12 . The negative tone photoresist of  claim 11 , wherein the cross-linking sites each is an epoxy-group. 
     
     
         13 . The negative tone photoresist of  claim 12 , wherein the cross-linkable compound comprises a first carbon chain bonded to one of the cross-linking sites, and the first carbon chain consists of a C2-C20 alkyl group, a cycloalkyl group, a hydroxylalkyl group, a cycloalkyl carboxyl group, a C2-C20 saturated or unsaturated hydrocarbon ring or a C2-C20 heterocyclic group. 
     
     
         14 . The negative tone photoresist of  claim 13 , wherein the first carbon chain is rotatable. 
     
     
         15 . The negative tone photoresist of  claim 9 , wherein the cross-linkable compound comprises three cross-linking sites. 
     
     
         16 . The negative tone photoresist of  claim 15 , wherein the cross-linking sites each is a hydroxy-group. 
     
     
         17 . The negative tone photoresist of  claim 16 , wherein the cross-linkable compound comprises a second carbon chain bonded to one of the cross-linking sites, and the second carbon chain consists of a C1-C8 alkyl group, a cycloalkyl group, a hydroxylalkyl group, a cycloalkyl carboxyl group, a C1-C8 saturated or unsaturated hydrocarbon ring, or a C1-C8 heterocyclic group. 
     
     
         18 . The negative tone photoresist of  claim 9 , wherein the cross-linkable compound comprises four cross-linking sites. 
     
     
         19 . The negative tone photoresist of  claim 18 , wherein the cross-linking sites each is a melamine group. 
     
     
         20 . A negative tone photoresist prepared from materials consisting of:
 a polymer selected from a group consisting of formulae (I), (II) and (III):   
       
         
           
           
               
               
           
         
         a cross-linkable compound, wherein the polymer has a weight percentage of a total solid weight of the negative tone photoresist greater than a weight percentage of the cross-linkable compound of a total solid weight of the negative tone photoresist; and 
         an organic solvent.