US2023121473A1PendingUtilityA1

Electroluminescent device, and display device comprising thereof

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Sep 30, 2019Filed: Dec 19, 2022Published: Apr 20, 2023
Est. expirySep 30, 2039(~13.2 yrs left)· nominal 20-yr term from priority
H10K 2101/20H10K 50/17H10K 50/115C09K 11/025C09K 11/883H10K 50/155H10K 2101/40H05B 33/14C09K 11/06C09K 2211/1007H10K 50/14H10K 50/11H10K 50/15H05B 33/20H10K 2101/27H10K 50/16C09K 2211/1029H10K 2101/30C09K 11/70C09K 2211/1059H01L 51/5088H01L 51/5072H01L 51/502H01L 51/5004H01L 51/5056
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Claims

Abstract

An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An electroluminescent device comprising
 a first electrode and a second electrode facing each other;   a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer comprising a quantum dot;   a hole transport layer disposed between the light emitting layer and the first electrode; and   an electron transport layer disposed between the light emitting layer and the second electrode,   wherein the light emitting layer comprises a thermally activated delayed fluorescence material,   the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 weight percent and less than about 10 weight percent, based on 100 weight percent of the light emitting layer, and   the thermally activated delayed fluorescence material comprises 9′-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-3,3 ″, 6,6″-tetraphenyl-9,3′:6′,9″-ter-9H-carbazole, 2,3,4,6-tetra(9H-carbazol-9-yl)-5-fluorobenzonitrile, 10,10′-(4,4′-sulfonyl bis(4,1-phenylene)) bis(9,9-dimethyl-9,10-dihydroacridine), 9′-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9,3′:6′,9″-ter-9H-carbazole, 9,9′-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole), 9,9′,9 ″,9″-((6-phenyl-1,3,5-triazine-2,4-diyl)bis(benzene-5,3,1-triyl))tetrakis (9H-carbazole), 10,10′-(4,4′-(4-phenyl-4H-1,2,4-triazole-3,5-diyl)bis(4,1-phenylene))bis(10H-phenoxazine), or a combination thereof.   
     
     
         2 . The electroluminescent device of  claim 1 , wherein the thermally activated delayed fluorescence material has a peak emission wavelength of less than or equal to about 480 nanometers. 
     
     
         3 . The electroluminescent device of  claim 1 , wherein
 a difference between a highest occupied molecular orbital energy level of the thermally activated delayed fluorescence material and a highest occupied molecular orbital energy level of the quantum dot is in a range of about −1.0 electronvolts to about 1.0 electronvolt.   
     
     
         4 . The electroluminescent device of  claim 1 , wherein
 the light emitting layer comprises a first layer directly on the hole transport layer and a second layer disposed between the first layer and the electron transport layer, and   wherein an amount of thermally activated delayed fluorescence material present in the first layer is greater than an amount of the thermally activated delayed fluorescence material present in the second layer.   
     
     
         5 . The electroluminescent device of  claim 4 , wherein the second layer is substantially free of the thermally activated delayed fluorescence material. 
     
     
         6 . The electroluminescent device of  claim 4 , wherein each of the first layer and the second layer emits a first light belonging to a same predetermined wavelength region. 
     
     
         7 . The electroluminescent device of  claim 6 , wherein the first light belongs to a first wavelength region of about 380 nanometers to about 488 nanometers, a second wavelength region of about 490 nanometers to about 510 nanometers, a third wavelength region of about 511 nanometers to about 580 nanometers, a fourth wavelength region of about 582 nanometers to about 600 nanometers, or a fifth wavelength region of about 620 nanometers to about 680 nanometers. 
     
     
         8 . The electroluminescent device of  claim 4 , wherein each of the first layer and the second layer has a thickness of about 1 nanometer to about 30 nanometers. 
     
     
         9 . The electroluminescent device of  claim 4 , wherein the second layer has a thickness less than or equal to the first layer. 
     
     
         10 . The electroluminescent device of  claim 1 , wherein a hydrophobic ligand is attached to a surface of the quantum dot. 
     
     
         11 . The electroluminescent device of  claim 1 , wherein the electron transport layer comprises an inorganic nanoparticle, a quinolone compound, a triazine compound, a quinoline compound, a triazole compound, a naphthalene compound, or a combination thereof. 
     
     
         12 . The electroluminescent device of  claim 11 , wherein the electron transport layer comprises a population layer comprising inorganic nanoparticles. 
     
     
         13 . The electroluminescent device of  claim 1 , further comprising a hole injection layer between the first electrode and the hole transport layer. 
     
     
         14 . A display device comprising the electroluminescent device of  claim 1 . 
     
     
         15 . An electroluminescent device comprising a first electrode and a second electrode facing each other;
 a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer comprising a quantum dot;   a hole transport layer disposed between the light emitting layer and the first electrode; and   an electron transport layer disposed between the light emitting layer and the second electrode,   wherein the light emitting layer comprises a thermally activated delayed fluorescence material,   the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 weight percent and less than about 10 weight percent, based on 100 weight percent of the light emitting layer, and   the quantum dot comprises a Group II-VI compound that does not comprise Cd and a Group III-V compound.   
     
     
         16 . The electroluminescent device of  claim 15 , wherein the quantum dot has a core-shell structure, wherein the core comprises the Group III-V compound and the shell comprises the Group II-VI compound that does not comprise Cd. 
     
     
         17 . The electroluminescent device of  claim 15 , wherein the electron transport layer comprises an inorganic nanoparticle, a quinolone compound, a triazine compound, a quinoline compound, a triazole compound, a naphthalene compound, or a combination thereof. 
     
     
         18 . The electroluminescent device of  claim 17 , wherein the electron transport layer comprises a population layer comprising inorganic nanoparticles. 
     
     
         19 . The electroluminescent device of  claim 15 , further comprising a hole injection layer between the first electrode and the hole transport layer. 
     
     
         20 . A display device comprising the electroluminescent device of  claim 15 .

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