US2023104803A1PendingUtilityA1

Oxide semiconductor film and semiconductor device

Assignee: SEMICONDUCTOR ENERGY LABPriority: Feb 12, 2015Filed: Nov 30, 2022Published: Apr 6, 2023

Est. expiryFeb 12, 2035(~8.5 yrs left)· nominal 20-yr term from priority

Inventors:Akihisa Shimomura Junichi Koezuka Kenichi Okazaki Yasumasa Yamane Yuhei Sato Shunpei Yamazaki

H10P 95/00H10P 14/22H10P 14/3434H10D 30/6755H10D 62/80H10D 30/6757H10D 30/67H10D 86/423H10D 86/60H10D 62/405H10D 30/6734C23C 14/08C23C 14/34H01L 27/1225H01L 21/02H01L 29/78696H01L 29/78648H01L 29/045H01L 29/7869H01L 29/24

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Claims

Abstract

To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

Claims

exact text as granted — not AI-modified

1 . A sputtering target comprising:
 a metal oxide having a composition in a neighborhood of In:M:Zn = 4:2:4.1,   wherein the M is Al, Ga, Y, or Sn, and   wherein in the case where a proportion of the In of the metal oxide is 4, a proportion of the M is greater than or equal to 1.5 and less than or equal to 2.5, and a proportion of the Zn is greater than or equal to 3.1 and less than or equal to 5.1.   
     
     
         2 . The sputtering target according to  claim 1 , wherein the metal oxide is polycrystalline.

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